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Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications

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Abstract

The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current–voltage measurements, Auger electron spectroscopy, and transmission electron microscopy imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600°C in air for the extent of heat treatment; the specific contact resistance showed only a gradual increase from an initial value of 5.2 × 10−5 Ω cm2. We observed a continuous silicon oxide layer in the thinner contact structures, which failed after 36 h of heating. Meanwhile, thicker contacts with enhanced stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.

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Authors and Affiliations

  1. Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, PA, 15213, USA

    Ariel Virshup

  2. Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, PA, 15213, USA

    Fang Liu & Lisa M. Porter

  3. ASRC Aerospace Corp., NASA Glenn Research Center, Cleveland, OH, 44135, USA

    Dorothy Lukco

  4. Linköping University, Linköping, Sweden

    Kristina Buchholt

  5. Linköping University, 581 83, Linköping, Sweden

    Anita Lloyd Spetz

Authors
  1. Ariel Virshup
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  2. Fang Liu
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  3. Dorothy Lukco
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  4. Kristina Buchholt
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  5. Anita Lloyd Spetz
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  6. Lisa M. Porter
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Correspondence to Ariel Virshup.

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Virshup, A., Liu, F., Lukco, D. et al. Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications. J. Electron. Mater. 40, 400–405 (2011). https://doi.org/10.1007/s11664-010-1449-0

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  • DOI: https://doi.org/10.1007/s11664-010-1449-0

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