Abstract
A highly (117)-preferred Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) thin film with an upper Bi4Ti3O12 (BTO) buffer layer was fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by a sol–gel method. The effects of the added upper Bi4Ti3O12 (BTO) layer on the structural and electrical properties of BNTM were investigated. X-ray diffraction, SEM and AFM images indicated that BTO/BNTM thin films exhibited a significantly higher (117) orientation and larger grain growth compared with the BNTM thin films (without the upper BTO layer). It was found that the BTO/BNTM thin films further showed the relatively larger remanent polarization (2P r = 94.3 μC/cm2) and dielectric constant (ε r = 467.8). The enhancement of piezoelectric properties was also obtained in BTO/BNTM thin films. Moreover, the BTO/BNTM thin films displayed the better fatigue properties, degraded by only 7.4 % after 109 pulse cycles as compared to 30.2 % for BNTM thin films.
Graphical Abstract
A highly (117)-preferred Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) thin film with an upper Bi4Ti3O12 (BTO) buffer layer was fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by a sol–gel method. The effects of the added upper Bi4Ti3O12 (BTO) layer on the structural and electrical properties of BNTM were investigated. X-ray diffraction, SEM and AFM images indicated that BTO/BNTM thin films exhibited a significantly higher (117) orientation and larger grain growth compared with the BNTM thin films (without the upper BTO layer). It was found that BTO/BNTM thin films further showed the relatively larger remanent polarization (2P r = 94.3 μC/cm2) and dielectric constant (ε r = 467.8). The enhancement of piezoelectric properties was also obtained in BTO/BNTM thin films. Moreover, the BTO/BNTM thin films displayed the better fatigue properties, degraded by only 7.4 % after 109 pulse cycles as compared to 30.2 % for BNTM thin films.
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Acknowledgments
This work was financially supported by the Project of National Natural Science Foundation of China (NSFC) (Grant Nos. 61274107, 51472210 and 61404113), the Key Project of Hunan Provincial NSFC (Grant No. 13JJ2023) and Hunan Provincial Innovation Foundation for Postgraduate Grant No. CX2014B267.
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Zhang, W.L., Tang, M.H., Xiong, Y. et al. Improvement of nucleation and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films with an upper Bi4Ti3O12 buffer layer. J Sol-Gel Sci Technol 80, 853–859 (2016). https://doi.org/10.1007/s10971-016-4175-0
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DOI: https://doi.org/10.1007/s10971-016-4175-0