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Far infrared properties of PbTe doped with Bismuth

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Abstract

Far infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon–phonon interaction model with two additional oscillators at about 140 and 219 cm−1 which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot.

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Authors and Affiliations

  1. Institute of Technical Sciences SASA, Knez Mihajlova 35/IV, 11000, Belgrade, Serbia

    P. M. Nikolic, S. S. Vujatovic, A. Bojicic, B. Stamenovic & T. Ivetic

  2. Solid State Section, Physics Department, Aristotle University of Thessaloniki, 54124, Thessaloniki, Greece

    K. M. Paraskevopoulos & T. T. Zorba

  3. Institute for Multidisciplinary Research, Kneza Viseslava 1, 11000, Belgrade, Serbia

    M. V. Nikolic

  4. Faculty of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11000, Belgrade, Serbia

    V. Blagojevic

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  1. P. M. Nikolic
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  2. K. M. Paraskevopoulos
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  3. S. S. Vujatovic
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  4. A. Bojicic
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  5. T. T. Zorba
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  6. M. V. Nikolic
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  8. T. Ivetic
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  9. V. Blagojevic
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Correspondence to P. M. Nikolic.

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Nikolic, P.M., Paraskevopoulos, K.M., Vujatovic, S.S. et al. Far infrared properties of PbTe doped with Bismuth. J Mater Sci 43, 5516–5520 (2008). https://doi.org/10.1007/s10853-008-2821-9

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  • DOI: https://doi.org/10.1007/s10853-008-2821-9

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