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Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

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Abstract

N-ZnO/Ga2O3/p-GaN heterojunction light-emitting diode (LED) was fabricated by metal-organic chemical vapor deposition. Compared with the n-ZnO/p-GaN structure, the deep level visible emission at 525 nm was completely suppressed while UV emission at ~392 nm was significantly improved in ZnO/Ga2O3/p-GaN structure. The role of Ga2O3 in n-ZnO/Ga2O3/p-GaN heterojunction LED was discussed in detail.

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Acknowledgments

This work was supported by national natural science foundation of China (No.60976010, No.61076045, No.11004020), national high technology research and development program (863 program) (No.2011AA03A102), the fundamental research funds for the central universities (No.DUT12LK22,DUT11LK43, DUT11RC(3)45), the research fund for the doctoral program of higher education (No. 20110041120045), the open fund of the state key laboratory of functional materials for informatics.

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Authors and Affiliations

  1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China

    Yuanda Liu, Hongwei Liang, Xiaochuan Xia, Rensheng Shen, Yang Liu, Jiming Bian & Guotong Du

  2. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130023, China

    Guotong Du

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  1. Yuanda Liu
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  2. Hongwei Liang
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  3. Xiaochuan Xia
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  4. Rensheng Shen
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  5. Yang Liu
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  6. Jiming Bian
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  7. Guotong Du
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Correspondence to Hongwei Liang.

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Liu, Y., Liang, H., Xia, X. et al. Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED. Appl. Phys. B 109, 605–609 (2012). https://doi.org/10.1007/s00340-012-5219-y

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  • DOI: https://doi.org/10.1007/s00340-012-5219-y

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