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Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes

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Abstract

In this work, we report on the fabrication and characteristics of light-emitting diodes based on p-GaN/i-ZnO/n-ZnO heterojunction. A 30 nm i-ZnO layer was grown on p-GaN by rf reactive magnetron sputtering, then a n-ZnO was deposited by the electron beam evaporation technique. The current-voltage characteristic of the obtained p-i-n heterojunction exhibited a diode-like rectifying behavior. Because the electrons from n-ZnO and the holes from p-GaN could be injected into a i-ZnO layer with a relatively low carrier concentration and mobility, the radiative recombination was mainly confined in i-ZnO region. As a result, an ultraviolet electro-emission at 3.21 eV, related to ZnO exciton recombination, was observed in a room-temperature electroluminescence spectrum of p-i-n heterojunction under forward bias.

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References

  1. H. Cao, J.Y. Xu, E.W. Seeling, R.P.H. Chang, Appl. Phys. Lett. 76, 2997 (2000); Phys. Rev. Lett. 84, 5584 (2000).

    Google Scholar 

  2. Z.K. Tang, G.K.L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Appl. Phys. Lett. 72, 3270 (1998)

    Article  CAS  Google Scholar 

  3. T. Aoki, Y. Hatanaka, D.C. Look, Appl. Phys. Lett. 76, 3257 (2000)

    Article  CAS  Google Scholar 

  4. A. Tsukazaki, A. Ohtomo, T. Onuma, et al., Nat. Mater. 4, 47 (2005)

    Article  PubMed  Google Scholar 

  5. P.F. Carcia, R.S. McLean, M.H. Reilly, G.N. Jr, Appl. Phys. Lett. 82, 1117 (2003)

    Article  CAS  Google Scholar 

  6. C.P. Park, I.S. Jeong, J.H. Kim, S. Im, Appl. Phys. Lett. 82, 3973 (2003)

    Article  CAS  Google Scholar 

  7. D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, G. Cantwel, Appl. Phys. Lett. 81, 1830 (2002)

    Article  CAS  Google Scholar 

  8. K.K. Kim, H.S. Kim, D.K. Hwang, J.H. Lim, S.J. Park, Appl. Phys. Lett. 83, 63 (2003)

    Article  CAS  Google Scholar 

  9. Y.R. Ryu, T.S. Lee, J.H. Leem, H.W. White, Appl. Phys. Lett. 83, 4032 (2003)

    CAS  Google Scholar 

  10. Ya.I. Alivov, J.E. Van Nostrand, D.C. Look, M.V. Chukichev, B.M. Ataev, Appl. Phys. Lett. 83, 2943 (2003)

    Article  CAS  Google Scholar 

  11. Q.X. Yu, B. Xu, Q.H. Wu, Y. Liao, G.Z. Wang, R.C. Fang, H.Y. Lee, C.T. Lee, Appl. Phys. Lett. 83, 4713 (2003)

    Article  CAS  Google Scholar 

  12. Z.L. Pei, C. Sun, M.H. Tan, J.Q. Xiao, D.H. Guan, R.F. Huang, L.S. Wen, J. Appl. Phys. 90, 3432 (2001)

    Article  CAS  Google Scholar 

  13. A.V. Dijken, E.A. Meulenkamp, D. Vanmaekelbergh, A. Meijerink, J. Phys. Chem. B. 104, 715 (2000)

    Google Scholar 

  14. K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, J.A. Voigt, Appl. Phys. Lett. 68, 403 (1996)

    Article  CAS  Google Scholar 

  15. H.Y. Xu, Y.C. Liu, J.G. Ma, Y.M. Luo, Y.M. Lu, D.Z. Shen, J.Y. Zhang, X.W. Fan, R. Mu, J. Phys.: Condens. Matter 16, 5143 (2004)

    Article  CAS  Google Scholar 

  16. L. Spanhel, M.A. Anderson, J. Am. Chem. Soc. 113, 2826 (1991)

    Article  CAS  Google Scholar 

  17. E. Burstein, Phys. Rev. 93, 632 (1954)

    Article  CAS  Google Scholar 

  18. D.K. Zhang, Y.C. Liu, Y.L. Liu, H. Yang, Physica B 351, 178 (2004)

    CAS  Google Scholar 

  19. Ya.I. Alivov, E.V. Kalinina, A.E. Cherenkov, D.C. Look, B.M. Ataev, A.K. Omaev, M.V. Chukichev, D.M. Bagnall, Appl. Phys. Lett. 83, 4719 (2003)

    Article  CAS  Google Scholar 

  20. A.G. Milnes, D.L. Feucht, Heterojunctions and Metal-Semiconductor Junctions (Academic, New York, 1972)

    Google Scholar 

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Authors and Affiliations

  1. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, PRC

    H. Y. Xu

  2. Center for Advanced Opto-electronic Functional Material Research, Northeast Normal University, Changchun, PRC

    H. Y. Xu, Y. C. Liu, Y. X. Liu, C. S. Xu & C. L. Shao

  3. Nanoscale Materials and Sensors Lab, Department of Physics, Fisk University, Nashville, TN

    R. Mu

Authors
  1. H. Y. Xu
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  2. Y. C. Liu
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  3. Y. X. Liu
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  4. C. S. Xu
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  5. C. L. Shao
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  6. R. Mu
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Correspondence to Y. C. Liu.

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Xu, H.Y., Liu, Y.C., Liu, Y.X. et al. Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes. Appl. Phys. B 80, 871–874 (2005). https://doi.org/10.1007/s00340-005-1790-9

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  • DOI: https://doi.org/10.1007/s00340-005-1790-9

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