Abstract
The ever decreasing dimensions of modern ICs and the demand for increasing packing density of devices on Si chips is providing continued motivation to improve manufacturing techniques in VLSI fabrication and in particular to refine the lithographic processes. The requirement to conserve “real estate” on the chip demands that features must be placed very closely together which again requires excellent control over any pattern transfer process. Pattern transfer from the mask into the substrate can in principle be done by an additive process like lift-off or a subtractive process like etching. However since lift-off processes are rather difficult to be reproducibly executed in a manufacturing environment, most pattern transfer processes are performed today by etching. Over the past ten years we have seen a steady transition from traditional wet chemical etching to anisotropic dry etching.
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Lehmann, H.W. (1986). Dry Etching: Concepts, Methods and Applications. In: Kelly, M.J., Weisbuch, C. (eds) The Physics and Fabrication of Microstructures and Microdevices. Springer Proceedings in Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71446-7_6
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DOI: https://doi.org/10.1007/978-3-642-71446-7_6
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