Abstract
Passive mode locking of a semiconductor diode laser using GaAs/ GaAlAs multiple quantum well (MQW) material as a saturable absorber has been reported recently [1]. The strong room-temperature excitonic absorption line in this material [2] saturates at relatively low powers, and it can be matched to the GaAs laser wavelength. Such mode-locked lasers are potentially important sources for future ultra-fast photonic signal processing.
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© 1985 Springer-Verlag Berlin Heidelberg
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Silberberg, Y., Smith, P.W., Miller, D.A.B., Tell, B., Gossard, A.C., Wiegmann, W. (1985). Fast Multiple Quantum Well Absorber for Mode Locking of Semiconductor Lasers. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_30
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DOI: https://doi.org/10.1007/978-3-642-70780-3_30
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