Abstract
A difference scheme for problem of femtosecond pulse interaction with semiconductor is proposed in the case of nonlinear dependencies of light energy absorption coefficient and mobility of free electrons from electric field strength. Comparison of some difference schemes efficiency for computation of various regimes of laser pulse interaction with semiconductor is carried out. It is shown that approach developed by us allows to analyze regimes for which difference schemes known earlier are unsuitable.
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© 2005 Springer-Verlag Berlin Heidelberg
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Trofimov, V.A., Loginova, M.M. (2005). Comparison of Some Difference Schemes for Problem of Femtosecond Pulse Interaction with Semiconductor in the Case of Nonlinear Mobility Coefficient. In: Li, Z., Vulkov, L., Waśniewski, J. (eds) Numerical Analysis and Its Applications. NAA 2004. Lecture Notes in Computer Science, vol 3401. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-31852-1_65
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DOI: https://doi.org/10.1007/978-3-540-31852-1_65
Publisher Name: Springer, Berlin, Heidelberg
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