Abstract
In this study we present a Chemical Vapor Deposition (CVD) process simulator based on the sparse field method for solving the level set equations. An accurate and efficient tool for tracking the CVD profile evolution is developed, which includes different physical effects of direct deposition and angle dependent ion-induced deposition as well as re-deposition. The simulation results shows that the deposition profiles agree well with the experiment for different opening sizes and various micro structures. It also provides the evidence that this approach is able to describe the complex topographical evolution for PECVD/LPCVD processes.
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Acknowledgments
This work was supported by research grant from NSFC No. 51075073, China and Department of Science and Technology (Project No. SR/S3/MERC/072/2011), New Delhi, India.
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Singh, S.S., Li, Y., Xing, Y., Pal, P. (2014). The Application of Level Set Method for Simulation of PECVD/LPCVD Processes. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_60
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DOI: https://doi.org/10.1007/978-3-319-03002-9_60
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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