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Optical and Thermal Properties of Cr in GaAs

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Semi-Insulating III–V Materials

Abstract

A variety of characterization techniques has been applied to the GaAs:Cr system and in particular the photoionization cross-sections, electron capture cross-section and thermal emission rates of the dominant chromium-related trap in GaAs have been measured. The temperature dependence of the photoionization thresholds can be accounted for by the temperature variation of the band gap. The hole emission rate is much greater than that for electrons and even in n-type material the DLTS signal is dominated by hole emission.

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References

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Author information

Authors and Affiliations

  1. Department of Electrical Engineering and Electronics, UMIST, PO Box 88, Manchester, M60 1QD, UK

    T. Jesper, B. Hamilton & A. R. Peaker

Authors
  1. T. Jesper
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  2. B. Hamilton
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  3. A. R. Peaker
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Editor information

Editors and Affiliations

  1. Plessey Research (Caswell) Ltd, UK

    G. J. Rees

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© 1980 T. Jesper, B. Hamilton and A.R. Peaker

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Jesper, T., Hamilton, B., Peaker, A.R. (1980). Optical and Thermal Properties of Cr in GaAs. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_29

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  • DOI: https://doi.org/10.1007/978-1-4684-9193-7_29

  • Publisher Name: Birkhäuser Boston

  • Print ISBN: 978-1-4684-9195-1

  • Online ISBN: 978-1-4684-9193-7

  • eBook Packages: Springer Book Archive

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