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Low-temperature, rapid thermal annealing of CIS thin films deposited by using a co-sputtering process with in and CuSe2 targets

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Abstract

Polycrystalline copper-indium-diselenide (CIS) thin films deposited by using co-sputtering with CuSe2 and In targets were prepared without any additional Se-containing gas for rapid thermal annealing (RTA) in a N2 ambient. RTA was used for a short annealing duration at a relatively low annealing temperature to control the chemical composition ratio of Se by minimizing the volatilization of Se. CIS chalcopyrite (112), (220)/(204), and (312)/(116) phases were clearly found in the samples treated using RTA without a Se-containing gas. The optical band gap energy of the RTAtreated CIS thin films was in the range of 1.12–1.34 eV and varied with the In content, but the deviation parameter, Δm, showed an opposite trend. The mean absorbance of the RTA-treated CIS thin films was 1.24, corresponding to an absorption of approximately 91.7% of the incident light in the visible and the near-infrared regions. Excessive holes with a carrier concentration of 1021 cm-3 were found in the RTA-treated p-type CIS thin films and led to a decrease in the resistivity to 10-3 O-cm, which was found to have been due to the short-duration annealing at low-temperature.

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Authors and Affiliations

  1. Electrical Materials Laboratory, Department of Electrical Engineering, Chosun University, Gwangju, 501-759, Korea

    Nam-Hoon Kim

  2. Department of Mechanical Engineering, Chosun University, Gwangju, 501-759, Korea

    Back-Sub Sung

  3. Department of Electrical Engineering, Chosun University, Gwangju, 501-759, Korea

    Young-Kil Jun, Dong Hyun Chung & Woo-Sun Lee

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  1. Nam-Hoon Kim
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  2. Back-Sub Sung
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  3. Young-Kil Jun
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  4. Dong Hyun Chung
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  5. Woo-Sun Lee
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Correspondence to Woo-Sun Lee.

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These authors contributed equally to this work.

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Kim, NH., Sung, BS., Jun, YK. et al. Low-temperature, rapid thermal annealing of CIS thin films deposited by using a co-sputtering process with in and CuSe2 targets. Journal of the Korean Physical Society 66, 1001–1008 (2015). https://doi.org/10.3938/jkps.66.1001

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