Abstract
The wet chemical etching method for etching V-grooves into sapphire substrates is used as scribing technique, and a geometric sapphire shaped InGaN/Al2O3 (S) light-emitting diode (LED) chip is fabricated. The V-groove is formed on the backside of a 150-µ-thick sapphire substrate by wet etching in a 3H2SO4:1H3PO4 chemical solution. The fabricated wet scribed geometric sapphire shaped LED exhibits a 15.86% enhancement in the light output power at 60-mA compared to the laser-stealth-scribed conventional rectangular LED. In addition, a ray-tracing simulation using “Light Tools” is performed on shaped geometric sapphire samples to investigate the enhancement of the light extracted from the substrate. The enhancement of the light output power for the wetscribed geometric sapphire shaped LED is thought to be due to the elimination of thermal damage and to an increase in light extraction from geometric sapphire shaped structure.
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Kawan, A., Yu, S.J., Park, H.J. et al. Fabrication of geometric sapphire shaped InGaN/Al2O3 (S) LED scribed by using wet chemical etching. Journal of the Korean Physical Society 64, 591–595 (2014). https://doi.org/10.3938/jkps.64.591
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DOI: https://doi.org/10.3938/jkps.64.591