Abstract
Nano-hole patterned sapphire substrates (NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography (LIL) combined with reactive ion etching (RIE) and inductively coupled plasma (ICP) techniques. Gallium nitride (GaN)-based light emitting diode (LED) structure was grown on NHPSS by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) measurement was conducted to compare the luminescence efficiency of the GaN-based LED structure grown on NHPSS (NHPSS-LED) and that on unpatterned sapphire substrates (UPSS-LED). Electroluminescence (EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 mA. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of GaN epilayer and light extraction efficiency of LEDs at the same time.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Fujii T., Gao Y., Sharma R., Hu E. L., DenBaars S. P. and Nakamura S., Applied Physics Letters 84, 855 (2004).
Nakada N., Nakaji M., Ishikawa H., Egawa T., Umeno M. and Jimbo T., Applied Physics Letters 76, 1804 (2000).
Guo Hao, Chen Hongjun, Zhang Xiong, Zhang Peiyuan, Liu Jianjun, Liu Honggang and Cui Yiping, Optical Engineering 52, 63402 (2013).
Kim Ja-Yeon, Kwon Min-Ki, Park Seong-Ju, Kim Sang Hoon and Lee Ki-Dong, Applied Physics Letters 96, 251103 (2010).
Tadatomo Kazuyuki, Okagawa Hiroaki, Ohuchi Youichiro, Tsunekawa Takashi, Imada Yoshiyuki, Kato Munehiro and Taguchi Tsunemasa, Japanese Journal of Applied Physics 40, L583 (2001).
P. C. Tsai, Ricky W. Chuang, Y. K. Su, Journal of Lightwave Technology 25, 591 (2007).
Jae-Hoon Lee, J. T. Oh, Y. C. Kim and Jung-Hee Lee, IEEE Photonics Technology Letters 220, 1563 (2008}
Yamada Motokazu, Mitani Tomotsugu, Narukawa Yukio, Shioji Shuji, Niki Isamu, Sonobe Shinya, Deguchi Kouichiro, Sano Masahiko and Mukai Takashi, Japanese Journal of Applied Physics 41, L1431 (2002).
Huang H. W., Lin C. H., Huang J. K., Lee K. Y., Lin C. F., Yu C. C., Tsai J. Y., Hsueh R., Kuo H. C. and Wang S. C., Materials Science and Engineering: B 164, 76 (2009).
Xia D., Ku Z., Lee S. C. and Brueck S. R., Advanced Materials 23, 147 (2011).
Zhang Yonghui, Wei Tongbo, Wang Junxi, Fan Chao, Chen Yu, Hu Qiang and Li Jinmin, Journal of Crystal Growth 394, 7 (2014).
Cho Joong-Yeon and Lee Heon, Journal of Photopolymer Science and Technology 28, 5 (2015).
Ignacio Martín-Fabiani, Stephen Riedel, Daniel R. Rueda, Jan Siegel, Johannes Boneberg, Tiberio A. Ezquerra and Nogales Aurora, American Chemical Society 30, 8973 (2014).
Lu C. and Lipson R. H., Laser & Photonics Reviews 4, 568 (2009).
Xuan Ming-dong, Dai Long-gui, Jia Hai-qiang and Chen Hong, Optoelectronics Letters 10, 51 (2014).
Liu Guoqiang, Zhang Jin and Zhou Chongxi, High Power Laser and Particle Beams 23, (2011). (in Chinese)
Chen H., Zhang Q. and Chou S. Y., Nanotechnology 26, 085302 (2015).
Chen Gui-chu and Fan Guang-han, Optoelectronics Letters 10, 250 (2014).
Mei-Tan Wang, Kuan-Yung Liao and Li Yun-Li, IEEE Photonics Technology Letters 23, 962 (2011).
Author information
Authors and Affiliations
Corresponding author
Additional information
This work has been supported by the National Key Scientific Instrument and Equipment Development Projects of China (No.2012YQ17000406), and the Foshan-CAS Cooperated Projects (No.2012A01).
Rights and permissions
About this article
Cite this article
Sang, Wh., Lin, L., Wang, L. et al. GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography. Optoelectron. Lett. 12, 178–181 (2016). https://doi.org/10.1007/s11801-016-5251-y
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11801-016-5251-y