Strong perturbation effects in heavy ion induced electronic sputtering of lithium fluoride

Abstract

Electronic sputtering of lithium fluoride by swift heavy ions was studied as a function of electronic energy loss (dE/dx) _e . The single crystal targets were irradiated with swift heavy ion beams (166Z _P 692; 46E _P /M _P (MeV/u) 611). This allowed varying the deposited energy by a factor of 20 (1.86dE/dx (keV/nm) 632). The sputtered secondary ions were measured from well controlled LiF targets without surface contaminations, by means of the time-of-flight technique (TOF-SIMS). The mass spectrum reveals an important contribution of clusters (over single ions), which increases with (dE/dx) _e . Another observation for the strongest perturbation at high dE/dx (>8 keV/nm) is that the secondary ion yields saturate: Y(dE/dx) = constant. In contrast, at lower dE/dx (<8 keV/nm) for weaker perturbation, the yield Y scales with (dE/dx)². This quadratic increase would rather point towards a thermal evaporation-like mechanism leading to electronic sputtering, however, the origin of the yield saturation remains an open finding.