Abstract
The technology of the growth of Si, Ge, and Si1–x Ge x layers by molecular-beam epitaxy with the use of a sublimation source of monoisotopic 30Si or 28Si and/or gas sources of monogermane 74GeH4 is demonstrated. All of the epitaxial layers are of high crystal quality. The secondary-ion mass spectroscopy data and Raman data suggest the high isotopic purity and structural perfection of the 30Si, 28Si, 74Ge, and 30Si1–x 74Ge x layers. The 30Si layers doped with Er exhibit an efficient photoluminescence signal.
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References
K. M. Itoh and H. Watanabe, MRS Commun. 4, 143 (2014).
P. T. Greenland, S. A. Lynch, and A. F. G. van der Meer, Nature 465, 1057 (2010).
V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, S. P. Svetlov, and D. V. Shengurov, Vakuum. Tekh. Tekhnol. 21, 45 (2011).
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Original Russian Text © A.P. Detochenko, S.A. Denisov, M.N. Drozdov, A.I. Mashin, V.A. Gavva, A.D. Bulanov, A.V. Nezhdanov, A.A. Ezhevskii, M.V. Stepikhova, V.Yu. Chalkov, V.N. Trushin, D.V. Shengurov, V.G. Shengurov, N.V. Abrosimov, H. Riemann, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 3, pp. 350–353.
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Detochenko, A.P., Denisov, S.A., Drozdov, M.N. et al. Epitaxially Grown Monoisotopic Si, Ge, and Si1–x Ge x Alloy Layers: Production and Some Properties. Semiconductors 50, 345–348 (2016). https://doi.org/10.1134/S1063782616030064
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DOI: https://doi.org/10.1134/S1063782616030064