Abstract
The effect of a quantizing static electric field parallel to the axis of a semiconductor superstructure on the charge-carrier mobility in the direction perpendicular to this axis is studied. The transverse conductivity of charge carriers was calculated on the basis of a quantum-mechanical kinetic equation. Using the results of the numerical analysis, the dependences of the time of the carriers’ momentum relaxation on their transverse energy and also the dependences of the charge-carrier mobility on the strength of the longitudinal quantizing electric field were plotted. It is shown that the dependence of the density of current flowing perpendicularly to the superlattice axis on the strength of the longitudinal electric field is oscillatory.
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Original Russian Text © D.V. Zav’yalov, S.V. Kryuchkov, N.E. Meshcheryakova, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 12, pp. 1463–1465.
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Zav’yalov, D.V., Kryuchkov, S.V. & Meshcheryakova, N.E. The effect of a quantizing electric field on the transverse mobility of electrons in a superlattice. Semiconductors 40, 1429–1431 (2006). https://doi.org/10.1134/S1063782606120104
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DOI: https://doi.org/10.1134/S1063782606120104