Abstract
The results of experimental investigations of electroforming and quasi-static current-voltage (I-V) characteristics of formed TiN-SiO2-W open sandwich structures in comparison to the Si-SiO2-W structures are presented. It is shown that similar memory and switching effects, which are associated with self-forming the conducting nanostructures on the surface of the open end of the dielectric film (silicon dioxide) about 20 nm thick, are observed in them. However, the features of the structures with the lower TiN electrode are the noticeably larger current, the lower threshold switching voltage from the low-conducting state into the high-conducting state, and a flatter I–V characteristic at voltages below the threshold one. These features can be explained by the decrease in the spreading resistance from the conducting structure, which is formed during electroforming, into the material of the lower electrode for titanium nitride compared to silicon (their resistivity values differ by a factor of 4) and the lower potential barrier at the TiN-SiO2 interface compared with the Si-SiO2 interface. The cell of energy-independent electrically reprogrammable memory with the TiN-SiO2-W structure possesses the better technical characteristics and manufacturability.
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Mordvintsev, V.M., Kudryavtsev, S.E., and Levin, V.L., Electroforming as Self-Forming the Conductive Nanostructures for Memory Cells of Nonvolatile Reprogrammable Memory, Ross. Nanotekhnol., 2009, vol. 4, nos. 1–2, pp. 174–182.
Mordvintsev, V.M., Kudryavtsev, S.E., and Levin, V.L., High-Stable Nonvolatile Electrically Reprogrammable Memory Based on Self-Forming Conductive Structures, Ross. Nanotekhnol., 2009, vol. 4, nos. 1–2, pp. 183–191.
Dirnlei, Dzh., Stounkhem, A., and Morgan, D., Electrical Phenomena in Amorphous Oxide Films, Usp. Fiz. Nauk, 1974, vol. 112, no. 1, pp. 83–127.
Pagnia, H. and Sotnik, N., Bistable Switching in Electroformed Metal-Insulator-Metal Devices, Phys. Status Solidi A, 1988, vol. 108, no. 11, pp. 11–65.
Mordvintsev, V.M., Kudryavtsev, S.E., Levin, V.L., and Tsvetkova, L.A., Influence of the Pressure of the Gas Medium and Duration of Controlling Pulses on the Stability of Characteristics of Memory Cells Based on Electroformed Si-SiO2-W Structures, Russ. Microelectron., 2010, vol. 39, no. 5, p. 313.
Mordvintsev, V.M., Sogoyan, A.V., Kudryavtsev, S.E., and Levin, V.L., The Investigation of the Radiation Behavior of Cells of Energy-Independent Electrically Reprogrammable Memory Based on Self-Formed Conducting Nanostructures. I. Mode of Information Storage, Russ. Microelectron., 2011, vol. 40, no. 2, p. 87.
Mordvintsev, V.M., Nonvolatile Electrically Reprogrammable Memory Based on Self-Forming Conductive Nanostructures with the Crossbar Architecture, Russ. Microelectron. (in press).
Mordvintsev, V.M. and Kudryavtsev, S.E., RF Patent no. 2436190 (2011).
Mordvintsev, V.M. and Shumilova, T.K., In situ Control of Etching a Nanometer Dielectric Layer by Measuring the System Admittance, Russ. Microelectron., 1999, vol. 28, no. 2, p. 114.
Highly Doped Si/SiO2/W Sandwich Structures with an Exposed Insulator Edge: Electrical Transport and Electroforming, Russ. Microelectron., 2007, vol. 36, no. 6, p. 371.
Sze, S.M. and Ng, K.K., Physics of Semiconductor Devices, Amazon, 2006, 3rd ed.
Simmons, J.G., Images Forces in Metal-Oxide-Metal Tunnel Transitions, in Tunneling Phenomena in Solids, Burstein, E. and Lundquist, S., Eds., New York: Plenum, 1969.
Mordvintsev, V.M., Kudryavtsev, S.E., and Levin, V.L., Design Development and Improvement of Nonvolatile Electrically Reprogrammable Memory Based on Electroformed Structures, Trudy FTIAN, 2011, vol. 21, pp. 129–144.
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Original Russian Text © V.M. Mordvintsev, S.E. Kudryavtsev, 2013, published in Mikroelektronika, 2013, Vol. 42, No. 2, pp. 93–104.
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Mordvintsev, V.M., Kudryavtsev, S.E. Investigation of electrical characteristics of memory cells based on self-forming conducting nanostructures in a form of the TiN-SiO2-W open sandwich structure. Russ Microelectron 42, 68–78 (2013). https://doi.org/10.1134/S1063739713010034
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DOI: https://doi.org/10.1134/S1063739713010034