Abstract
A theoretical model has been proposed for calculating the surface energy of nanowhiskers in the nearest neighbor approximation. The surface energy has been calculated for different faces of III–V semiconductor crystals with cubic and hexagonal structures. The effect of the formation of the hexagonal wurtzite phase in nanowhiskers of III–V semiconductor compounds has been considered using the obtained data. Estimates for the critical radius of the phase transition in III–V semiconductor nanowhiskers are presented.
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Original Russian Text © N.V. Sibirev, M.A. Timofeeva, A.D. Bol’shakov, M.V. Nazarenko, V.G. Dubrovskiĭ, 2010, published in Fizika Tverdogo Tela, 2010, Vol. 52, No. 7, pp. 1428–1434.
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Sibirev, N.V., Timofeeva, M.A., Bol’shakov, A.D. et al. Surface energy and crystal structure of nanowhiskers of III–V semiconductor compounds. Phys. Solid State 52, 1531–1538 (2010). https://doi.org/10.1134/S1063783410070309
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DOI: https://doi.org/10.1134/S1063783410070309