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Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The electric fields in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells are estimated. The quantum wells are grown by plasma-assisted molecular-beam epitaxy with plasma activation of nitrogen. The three-dimensional and planar modes of buffer layer growth are used. The transition to the three-dimensional mode of growth yields a substantial increase in the photoluminescence intensity of the quantum wells and a shift of the photoluminescence line to shorter wavelengths. These effects are attributed to the fact that, because of the extra three-dimensional localization of charge carriers in the quantum-well layer, the quantum-confined Stark effect relaxes. The effect of localization is supposedly due to spontaneous composition fluctuations formed in the AlGaN alloy and enhanced by the three-dimensional growth.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    E. A. Shevchenko, V. N. Jmerik, A. M. Mizerov, A. A. Sitnikova, S. V. Ivanov & A. A. Toropov

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  1. E. A. Shevchenko
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  2. V. N. Jmerik
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  3. A. M. Mizerov
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  4. A. A. Sitnikova
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  5. S. V. Ivanov
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  6. A. A. Toropov
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Correspondence to E. A. Shevchenko.

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Original Russian Text © E.A. Shevchenko, V.N. Jmerik, A.M. Mizerov, A.A. Sitnikova, S.V. Ivanov, A.A. Toropov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 8, pp. 1022–1026.

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Shevchenko, E.A., Jmerik, V.N., Mizerov, A.M. et al. Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies. Semiconductors 46, 998–1002 (2012). https://doi.org/10.1134/S1063782612080192

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  • DOI: https://doi.org/10.1134/S1063782612080192

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