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Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals

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Abstract

Films obtained using molecular-beam deposition of SiO powder on c-Si (111) substrates for the purpose of SiO2 system formation with silicon nanocrystals were investigated before and after 900–1100°C annealing by photoluminescence, ultrasoft X-ray emission spectroscopy, X-ray photoelectron spectroscopy, X-ray absorption near-edge structure spectroscopy, and X-ray diffraction. The appearance of (111)-oriented luminescent silicon nanoclusters in considerable amounts upon annealing at T = 1000–1100°C is established in the investigated films. An anomalous phenomenon of X-ray absorption quantum yield intensity reversal for the L 2,3 elementary silicon edge is detected. Models for this phenomenon are suggested.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    V. A. Terekhov, S. Yu. Turishchev, K. N. Pankov, I. E. Zanin & E. P. Domashevskaya

  2. University of Nizhni Novgorod, Prospekt Gagarina 23, 603950, Nizhni Novgorod, Russia

    D. I. Tetelbaum, A. N. Mikhailov, A. I. Belov & D. E. Nikolichev

Authors
  1. V. A. Terekhov
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  2. S. Yu. Turishchev
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  3. K. N. Pankov
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  4. I. E. Zanin
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  5. E. P. Domashevskaya
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  6. D. I. Tetelbaum
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  7. A. N. Mikhailov
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  8. A. I. Belov
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  9. D. E. Nikolichev
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Corresponding author

Correspondence to V. A. Terekhov.

Additional information

Original Russian Text © V.A. Terekhov, S.Yu. Turishchev, K.N. Pankov, I.E. Zanin, E.P. Domashevskaya, D.I. Tetelbaum, A.N. Mikhailov, A.I. Belov, D.E. Nikolichev, 2011, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2011, No. 10, pp. 46–55.

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Terekhov, V.A., Turishchev, S.Y., Pankov, K.N. et al. Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals. J. Surf. Investig. 5, 958–967 (2011). https://doi.org/10.1134/S102745101110020X

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  • DOI: https://doi.org/10.1134/S102745101110020X

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