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Calculation of residual thermal stress in GaN epitaxial layers grown on technologically important substrates

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Abstract

A detailed investigation of residual thermal stress and misfit strain in GaN epitaxial layers grown on technologically important substrates is performed. The thermal stress is low when GaN is grown on AlN, SiC and Si, and relatively higher when Al2O3 substrate is used. The stress is compressive for AlN and Al2O3 and tensile for Si and SiC substrates. Residual thermal stress analysis was also performed for three layer heterostructures of GaN/AlN/6H-SiC and GaN/AlN/Al2O3. The stress remains the same when a sapphire substrate is used with or without an AlN buffer layer but reduces by an order of magnitude when a 6H-SiC substrate is used with an AlN buffer layer.

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References

  1. H. MORKOC, S. STRITE, G. B. GAO, M. E. LIN, B. SVERDLOV and M. BURNS, J. Appl. Phys. 76 (1994) 1363 and references there in.

    Google Scholar 

  2. GaN and Related Materials for Device Applications, Materials Research Society Bulletin (1997), Vol. 22.

  3. R. J. MOLNAR, R. SINGH and T. D. MOUSTAKAS, Appl. Phys. Lett. 66 (1995) 268.

    Google Scholar 

  4. S. NAKAMURA, T. MUKAI and M. SENOH, J. Appl. Phys. 76 (1994) 8189.

    Google Scholar 

  5. H. P. MARUSKA and J. J. TIETJEN, Appl. Phys. Lett. 15 (1969) 327.

    Google Scholar 

  6. M. ILEGEMS and H. C. MONTGOMETRY, J. Phys. Chem. Solids 34 (1973) 885.

    Google Scholar 

  7. G. JACOB, M. BOULOU and M. FURTADO, J. Cryst. Growth 42 (1977) 136.

    Google Scholar 

  8. H. M. MANASEVIT, F. M. ERDMANN and W. I. SIMPSON, J. Electrochem. Soc. 118 (1971) 1864.

    Google Scholar 

  9. J. W. ANDREW and M. A. LITTLEJOHN, ibid. 122 (1975) 1273.

  10. T. KAWABATA, T. MATSUDA and S. KOIKE, J. Appl. Phys. 56 (1984) 2367.

    Google Scholar 

  11. I. P. NIKITINA and V. A. DMITRIEV, Inst. Phys. Conf. Ser. 141 (1995) 431.

    Google Scholar 

  12. T. W. WEEKS, M. D. BREMSER, K. S. AILEY, E. CARLSON, W. G. PERRY and R. F. DAVIS, Appl. Phys. Lett. 67 (1995) 401.

    Google Scholar 

  13. T. D. MOUSTAKAS, R. P. VAUDO, R. SINGH, D. KORAKAKIS, M. MISRA, A. SAMPATH and I. D. GOEPFERT, Inst. Phys. Conf. Ser. 142 (1996) 833.

    Google Scholar 

  14. M. E. LIN, S. STRITE, A. AGARWAL, A. SALVADOR, G. L. ZHOU, N. TERAGUCHI, A. ROCKETT and H. MORKOC, Appl. Phys. Lett. 62 (1993) 702.

    Google Scholar 

  15. YU V. MELNIK, I. P. NIKITINA, A. S. ZUBRILOV, A. A. SITNIKOVA, Y. G. MUSIKHIN and V. A. DMITRIEV, Inst. Phys. Conf. Ser. 142 (1996) 863.

    Google Scholar 

  16. R. J. MOLNAR, R. AGGARWAL, Z. L. LIAU, E. R. BROWN, I. MELNGAILIS, W. GUTZ, L. T. ROMANO and N. M. JOHNSON, Mater. Res. Soc. Symp. Proc. 395 (1996) 189.

    Google Scholar 

  17. K. NANIWAE, S. ITOH, H. AMANO, K. ITOH, K. HIRAMATSU and I. AKASAKI, J. Cryst. Growth 99 (1990) 381.

    Google Scholar 

  18. H. Q. LU, I. B. BHAT, B. C. LEE, G. A. SLACK and L. J. SCHOWALTER, MRS Symp. Proc. 482 (1997) 277.

    Google Scholar 

  19. H. LIU, A. C. FRENKEL, J. G. KIM and R. M. PARK, J. Appl. Phys. 74 (1993) 6124.

    Google Scholar 

  20. M. J. PAISLEY, Z. SITAR, J. B. POSTHILL and R. F. DAVIS, J. Vac. Sci. Technol. A 7 (1989) 701.

    Google Scholar 

  21. J. G. KIM, A. C. FRENKEL, H. LIU and R. M. PARK, Appl. Phys. Lett. 65 (1994) 91.

    Google Scholar 

  22. D. A. S. LOEBER, N. G. ANDERSON, J. M. REDWING, J. S. FLYNN, G. M. SMITH and M. A. TISCHLER, MRS Symp. Proc. 449 (1997) 1203.

    Google Scholar 

  23. Y. MORIMOTO, K. UCHIHO and S. USHIO, J. Electrochem. Soc. 120 (1973) 1783.

    Google Scholar 

  24. T. LEI, M. FANCIULLI, R. MOLNAR, T. MOUSTAKAS, R. GRAHAM and J. SCANLON, Appl. Phys. Lett. 59 (1991) 944.

    Google Scholar 

  25. Y. SOMENO, M. SASAKI and T. HIRAI, J. Jpn. Appl. Phys. 30 (1991) 1792.

    Google Scholar 

  26. J. L. DEPUIE and E. GULARI, Appl. Phys. Lett. 59 (1991) 549.

    Google Scholar 

  27. T. LEI, T. D. MOUSTAKAS, R. J. GRAHAM, Y. HE and S. J. BERKOWITZ, J. Appl. Phys. 71 (1992) 1.

    Google Scholar 

  28. N. ITOH, J. C. RHEE, T. KAWABATA and S. KOIKE, ibid. 58 (1985) 1828.

  29. K. HIRAMATSU, T. DETCHPROHM and I. AKASAKI, Jpn. J. Appl. Phys. 32 (1993) 1528.

    Google Scholar 

  30. J. KECKES, J. W. GERLACH, R. AVERBECK, H. RIECHERT, S. BADER, B. HAHN, H.-J. LUGAUER, A. LELL, V. HARLE, A. WENZEL and B. RAUCHENBACH, Appl. Phys. Lett. 79(26) (2001) 4307.

    Google Scholar 

  31. J. W. AGER III, T. SUSKI, S. RUVIMOV, J. KRUEGER, G. CONTI, E. R. WEBER, M. D. BREMSER, R. DAVIS and C. P. KUO, Mater. Res. Soc. Symp. Proc. 449 (1997) 775.

    Google Scholar 

  32. T. KOZAWA, T. KACHI, H. KANO, H. NAGASE, N. KOIDE and K. MANABE, J. Appl. Phys. 77(9) (1995) 4389.

    Google Scholar 

  33. T. S. ZHELEVA, A. M. ASHMAWI, O. H. NAM and R. F. DAVIS, Appl. Phys. Lett. 74 (1999) 2492.

    Google Scholar 

  34. W. G. PERRY, T. ZHELEVA, K. J. LINTHICUM, M. D. BREMSER, R. F. DAVIS, W. SHAN and J. J. SONG, Mater. Res. Soc. Symp. Proc. 449 (1997) 847.

    Google Scholar 

  35. K. WANG and R. R. REEBER, ibid. 537 (1999) G3.18.1.

  36. G. H. OLSEN and M. ETTENBERG, J. Appl. Phys. 48 (1977) 2543.

    Google Scholar 

  37. V. A. SAVASTENKO and A. U. SHELEG, Phys. Status Solidi A 48 (1978) K135.

    Google Scholar 

  38. K. WANG and R. R. REEBER, Mater. Res. Soc. Symp. Proc. 482 (1998) 863.

    Google Scholar 

  39. K. TSUBOUCHI and N. MIKOSHIBA, IEEE Trans. Sonics Ultrason. SU-32 (1985) 634.

    Google Scholar 

  40. J. ROSS, M. RUBIN and T. K. GUSTAFSON, J. Mater. Re s. 8(10) (1993) 2613.

    Google Scholar 

  41. H. B. HUNTINGTON, "The Elastic Constants of Crystals" (Academic Press, New York, 1958) p. 70.

    Google Scholar 

  42. Y. S. TOULOUKIAN, R. K. KIRBY, R. E. TAYLOR and T. Y. R. LEE (eds.), "Thermophysical Properties of Matter" (Plenum Press, New York, 1977) Vol. 13.

    Google Scholar 

  43. G. ARLT and G. R. SCHODDER, Jr., J. Acoust. Soc. Amer. 37 (1965) 384.

    Google Scholar 

  44. Z. LI and R. C. BRADT, J. Amer. Ceram. Soc. 69(12) (1986) 863.

    Google Scholar 

  45. R. R. REEBER and K. WANG, Mater. Res. Soc. Symp. Proc. 410 (1996) 211.

    Google Scholar 

  46. Z. LI and R. C. BRADT, J. Appl. Phys. 60(2) (1986) 612.

    Google Scholar 

  47. H. J. MCSKIMIN and P. ANDREACH, Jr., ibid. 35 (1964) 2161.

    Google Scholar 

  48. R. R. REEBER and K. WANG, Mater. Chem. Phys. 46 (1996) 259.

    Google Scholar 

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Authors and Affiliations

  1. Physics Department, Wichita State University, 1845 Fairmount, Wichita, KS, 67260, USA

    K. Barghout

  2. Mechanical Engineering Department, Wichita State University, 1845 Fairmount, Wichita, KS, 67260, USA

    J. Chaudhuri

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  1. K. Barghout
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Barghout, K., Chaudhuri, J. Calculation of residual thermal stress in GaN epitaxial layers grown on technologically important substrates. Journal of Materials Science 39, 5817–5823 (2004). https://doi.org/10.1023/B:JMSC.0000040094.33095.6f

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  • DOI: https://doi.org/10.1023/B:JMSC.0000040094.33095.6f

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