Abstract
Hexamethyldisiloxane (HMDSO) and hexamethyldisilazane (HMDSN) were used as organosilicon reagents for PE-CVD of thin films under filamentary barrier-discharge conditions at atmospheric pressure. Efficient discharges were obtained in the region of moderate frequencies (5 kHz). The following mixtures of organosilicon reagents with carrier gas and oxidants or ammonia were investigated: HMDSO+Ar, HMDSO+N2, HMDSO+O2+Ar, HMDSO+N2O+Ar, and HMDSN+NH3+N2. Under such conditions HMDSO was converted to produce thin films (10–1000 nm) of silicon oxide, generally containing admixtures of residual “organic” content (Si—CHn and Si—H groups). The films deposited from HMDSN+NH3+N2 contained silicon, nitrogen and oxygen.
Similar content being viewed by others
REFERENCES
D. Hageman, U. Vorer, C. Oehr, and R. Riedel, Surf. Coat. Technol. 116-119, 1033 (1999).
N. Benissad, C. Boisse-Laporte, C. Vallée, A. Garnier, and A. Goullet, Surf. Coat. Technol. 116-119, 868 (1999).
M. R. Alexander, R. D. Short, F. R. Jones, W. Michaeli, and C. J. Blomfield, Appl. Surf. Sci. 137, 179 (1999).
M. R. Wertheimer, H. R. Thomas, M. J. Perri, J. E. Klemberg-Sapieha, and L. Martinu, Pure Appl. Chem. 68, 1047 (1996).
S. Okazaki, M. Kogoma, M. Uehara, and Y. Kimura, J. Phys. D: Appl. Phys. 26, 889 (1993).
Y. Sawada, S. Ogawa, and M. Kogoma, J. Phys. D: Appl. Phys. 28, 1661 (1995).
K. Schmidt-Szalowski, W. Fabianowski, Z. R?anek-Boroch, and J. Sentek, J. Chem. Vap. Deposition 6, 183 (1998).
A. Sonnenfeld, T. M. Tun, L. Zajickova, H.-E.Wagner, J. F. Behnke, and R. Hippler, Deposits from hexamethyldisiloxane in a dielectric barrier discharge at atmospheric pressure, in Contr. Papers, Int. Symp. High Pressure Low Temperature Plasma Chemistry (HAKONE VII) Greifswald, p. 445 (2000).
K. V. Kozlov, A. Sonnenfeld, and J. F. Behnke, Catalytic effect of noble gases in the reaction of plasma-chemical decomposition of hexamethyldisiloxane in the dielectric barrier discharge, in Contr. Papers, Int. Symp. High Pressure Low Temperature Plasma Chemistry (HAKONE VII) Greifswald, p. 247 (2000).
C.-P. Klages, K. Höpfner, N. Kläke, and R. Thyen, Functional group retention in BDB-based plasma polymerization, in Contr. Papers, Int. Symp. High Pressure Low Temperature Plasma Chemistry (HAKONE VII) Greifswald, p. 429 (2000).
K. Schmidt-Szalowski, Z. Rymuza, Z. R?zanek-Boroch, Z.Kusznerewicz, M. Misiak, and J. Sentek, Studies of thin films of silicon compounds obtained by PE-CVD under atmospheric pressure, in Proc. 14th Int. Symp. Plasma Chemistry, Praha, p. 1309 (1999).
Z. Rymuza, M. Misiak, L. Kuhn, K. Schmidt-Szalowski, and Z. R?anek-Boroch, Microsystem Technol. 5, 181 (1999).
A. M. Wróbel and M. R. Wertheimer, Plasma Deposition, Treatment, and Etching of Polymers, R. d'Agostino, ed., Academic Press, p. 163 (1990).
R. Lamendola, and R. d'Agostino, Plasma Processing of Polymers, R. d'Agostiono, P. Favia, and F. Fracassi, eds., Kluwer Academic Publisher, p. 321 (1997).
T. Yamaguchi, M. Shimozuma, H. Date, N. Sakamoto, H. Matsuura, and H. Tagashira, Surface morphology measurements and particles formation on SiOx films deposited using low frequency plasma CVD method, Proc., 12th Int. Symp. Plasma Chemistry, Minneapolis, p. 2161 (1995).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Schmidt-Szalowski, K., Rżanek-Boroch, Z., Sentek, J. et al. Thin Films Deposition from Hexamethyldisiloxane and Hexamethyldisilazane under Dielectric-Barrier Discharge (DBD) Conditions. Plasmas and Polymers 5, 173–190 (2000). https://doi.org/10.1023/A:1011314420080
Issue Date:
DOI: https://doi.org/10.1023/A:1011314420080