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Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films

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Abstract

Highly (201) oriented Zn-doped β-Ga2O3 thin films with different dopant concentrations were grown on (0001) sapphire substrates by radio frequency magnetron sputtering. With the increase of Zn dopant concentration, the crystal lattice expands, the energy band gap shrinks, and the oxygen vacancy concentration decreases. Both the metal semiconductor metal (MSM) structure photodetectors based on the pure and Zn-doped β-Ga2O3 thin films exhibit solar blind UV photoelectric property. Compared to the pure β-Ga2O3 photodetector, the Zn-doped one exhibits a lower dark current, a higher photo/dark current ratio, a faster photoresponse speed, which can be attributed to the decreases of oxygen vacancy concentration.

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Authors and Affiliations

  1. Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, China

    Daoyou Guo, Xinyuan Qin, Ming Lv, Haoze Shi, Yuanli Su, Guosheng Yao, Shunli Wang, Chaorong Li & Peigang Li

  2. State Key Laboratory of Information Photonics and Optical Communications & Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Daoyou Guo, Peigang Li & Weihua Tang

Authors
  1. Daoyou Guo
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  2. Xinyuan Qin
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  3. Ming Lv
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  4. Haoze Shi
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  5. Yuanli Su
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  6. Guosheng Yao
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  7. Shunli Wang
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  8. Chaorong Li
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  9. Peigang Li
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  10. Weihua Tang
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Correspondence to Peigang Li or Weihua Tang.

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Guo, D., Qin, X., Lv, M. et al. Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films. Electron. Mater. Lett. 13, 483–488 (2017). https://doi.org/10.1007/s13391-017-7072-y

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  • DOI: https://doi.org/10.1007/s13391-017-7072-y

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