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Optical Properties of Amorphous Silicon–Carbon Alloys (a-Si x C1-x ) Deposited by RF Co-Sputtering

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Abstract

Amorphous silicon–carbon alloy (a-Si x C1-x ) thin films have been deposited by radio frequency (RF) sputter deposition. These films were obtained, from a composite target consisting of silicon fragments regularly distributed on the surface of a pure graphite disc, for different values of silicon surface fraction R Si/C, at an RF power of 250 W. X-ray diffraction diagrams show that all the as-deposited Si x C1-x thin films are amorphous. The optical properties of the a-Si x C1-x films were investigated by optical transmission measurements in the ultraviolet–visible–near infrared wavelengths range. The optical band gap E g varies, with R Si/C, from 1.4 to 1.9 eV and presents a wide maximum at an R Si/C value of about 35 %. This maximum value is attributed to amorphous silicon carbide a-SiC as confirmed by theoretical correlation between the molar fraction x and R Si/C. The refractive index n follows well the Cauchy law and the extrapolated value, at infinite wavelengths, increases from 2.1 to 2.65 as the R Si/C fraction increases.

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Authors and Affiliations

  1. Solid State Physics and Thin Films Laboratory, Faculty of Sciences Semlalia, Cadi Ayyad University, P.O.Box 2390, Marrakesh, 40000, Morocco

    A. El Khalfi, E. Ech-chamikh, Y. Ijdiyaou, M. Azizan & A. Essafti

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  1. A. El Khalfi
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  2. E. Ech-chamikh
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  3. Y. Ijdiyaou
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  4. M. Azizan
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  5. A. Essafti
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Correspondence to A. El Khalfi.

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El Khalfi, A., Ech-chamikh, E., Ijdiyaou, Y. et al. Optical Properties of Amorphous Silicon–Carbon Alloys (a-Si x C1-x ) Deposited by RF Co-Sputtering. Arab J Sci Eng 39, 5771–5776 (2014). https://doi.org/10.1007/s13369-014-1134-3

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  • DOI: https://doi.org/10.1007/s13369-014-1134-3

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