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Characterization of CVD Diamond Thin Film Electrodes in Terms of their Semiconductivity

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Abstract

A series of boron-doped diamond films were grown using hot filament technique, over wide doping level ranges. Their semiconductor characteristics (the uncompensated acceptor concentration and flat band potential) were determined from Mott–Schottky plots measured by electrochemical impedance spectroscopy. These parameters can be used for the films’ characterization. The applicability of the electrochemical impedance spectroscopy approach in the semiconductor diamond characterization is discussed.

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Notes

  1. Nitrogen might enter the diamond by different paths, e.g., from acetone, methanol, and trimethylborate (see the “The Film Growth” section) handled in air. One more source is hydrogen; the ultrahigh purity hydrogen may contain up to 8 × 10−6% N (∼10 ppm; note that the H/C ratio in the feeding gas is 100). It should be emphasized that such negligibly small nitrogen admixture in CVD diamond (undoped or boron-doped) is unimportant for the great majority of scientific purposes and therefore usually is not controlled. In our case, however, when we go down to the acceptor concentration as low as ∼10−18, the donor–acceptor interplay comes to the fore.

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Acknowledgments

This work was supported by the Russian Foundation for Basic Research, project no. 13-03-00660.

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Authors and Affiliations

  1. Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, Leninskii prosp. 31, Moscow, 119071, Russia

    Yu. V. Pleskov, M. D. Krotova, V. V. Elkin, V. P. Varnin & I. G. Teremetskaya

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  1. Yu. V. Pleskov
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  2. M. D. Krotova
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  3. V. V. Elkin
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  4. V. P. Varnin
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  5. I. G. Teremetskaya
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Correspondence to Yu. V. Pleskov.

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Pleskov, Y.V., Krotova, M.D., Elkin, V.V. et al. Characterization of CVD Diamond Thin Film Electrodes in Terms of their Semiconductivity. Electrocatalysis 4, 241–244 (2013). https://doi.org/10.1007/s12678-013-0142-5

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