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Surface charge transfer doping for two-dimensional semiconductor-based electronic and optoelectronic devices

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Abstract

Doping of semiconductors, i.e., accurately modulating the charge carrier type and concentration in a controllable manner, is a key technology foundation for modern electronics and optoelectronics. However, the conventional doping technologies widely utilized in silicon industry, such as ion implantation and thermal diffusion, always fail when applied to two-dimensional (2D) materials with atomically-thin nature. Surface charge transfer doping (SCTD) is emerging as an effective and non-destructive doping technique to provide reliable doping capability for 2D materials, in particular 2D semiconductors. Herein, we summarize the recent advances and developments on the SCTD of 2D semiconductors and its application in electronic and optoelectronic devices. The underlying mechanism of STCD processes on 2D semiconductors is briefly introduced. Its impact on tuning the fundamental properties of various 2D systems is highlighted. We particularly emphasize on the SCTD-enabled high-performance 2D functional devices. Finally, the challenges and opportunities for the future development of SCTD are discussed.

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Acknowledgements

The authors acknowledge the financial support from Natural Science Foundation of Jiangsu Province (No. BK20170005), the National Natural Science Foundation of China (No. 21872100), Singapore MOE Grants MOE2019-T2-1-002 and R143-000-A43-114, Fundamental Research Foundation of Shenzhen (Nos. JCYJ20190808152607389 and JCYJ20170817100405375), and Shenzhen Peacock Plan (No. KQTD2016053112042971).

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  1. Yanan Wang and Yue Zheng contributed equally to this work.

Authors and Affiliations

  1. Department of Physics, National University of Singapore, Singapore, 117542, Singapore

    Yanan Wang, Yue Zheng & Wei Chen

  2. SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China

    Yue Zheng & Cheng Han

  3. Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore

    Wei Chen

  4. Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China

    Wei Chen

  5. National University of Singapore (Suzhou) Research Institute, Suzhou, 215123, China

    Wei Chen

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  1. Yanan Wang
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Wang, Y., Zheng, Y., Han, C. et al. Surface charge transfer doping for two-dimensional semiconductor-based electronic and optoelectronic devices. Nano Res. 14, 1682–1697 (2021). https://doi.org/10.1007/s12274-020-2919-1

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