Abstract
All-inorganic CsPbBr3 perovskite quantum dots (QDs) hold great promise as candidate materials for next-generation electroluminescent displays owing to their excellent optoelectronic properties. However, the long insulating ligands on the surface of CsPbBr3 QDs originating from the synthesis process hinder the fabrication of high-performance optoelectronic devices. Herein, an efficient ligand-exchange route is proposed with the use of perovskite-precursor-based halide ligands, including a series of phenalkylammonium bromides with a π-conjugation benzene ring and different branch lengths. Based on the ligand-exchange method, the conductivity of the CsPbBr3 QD layer is significantly improved owing to ligand shortening and the insertion of the π-conjugation benzene ring. As a result, high brightness (up to 12,650 cd/m2) and low turn-on voltage (as low as 2.66 V) can be realized in CsPbBr3 QD light-emitting diodes (QLEDs), leading to dramatic improvements in device performance with a current efficiency of 13.43 cd/A, power efficiency of 12.05 lm/W, and external quantum efficiency of 4.33%.
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Acknowledgements
This work was financially supported by the National Natural Science Foundation of China (Nos. U1632151, 61076040, 61520106012, 61522505, and 61722404), the Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology of China in National University of Defense Technology (No. SKL 2015 KF04), and the Key Research and Development Project of Anhui Province of China (No. 1704a0902023).
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Li, G., Huang, J., Li, Y. et al. Highly bright and low turn-on voltage CsPbBr3 quantum dot LEDs via conjugation molecular ligand exchange. Nano Res. 12, 109–114 (2019). https://doi.org/10.1007/s12274-018-2187-5
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DOI: https://doi.org/10.1007/s12274-018-2187-5