Nano Express

Nanoscale Research Letters

, Volume 5, Issue 2, pp 360-363

Open Access This content is freely available online to anyone, anywhere at any time.

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

  • G. E. CirlinAffiliated withInstitute for Analytical Instrumentation RASSt.-Petersburg Physics and Technology Centre for Research and Education RASIoffe Physical Technical Institute RAS Email author 
  • , A. D. BouravleuvAffiliated withSt.-Petersburg Physics and Technology Centre for Research and Education RASIoffe Physical Technical Institute RAS
  • , I. P. SoshnikovAffiliated withSt.-Petersburg Physics and Technology Centre for Research and Education RASIoffe Physical Technical Institute RAS
  • , Yu. B. SamsonenkoAffiliated withInstitute for Analytical Instrumentation RASSt.-Petersburg Physics and Technology Centre for Research and Education RASIoffe Physical Technical Institute RAS
  • , V. G. DubrovskiiAffiliated withSt.-Petersburg Physics and Technology Centre for Research and Education RASIoffe Physical Technical Institute RAS
  • , E. M. ArakcheevaAffiliated withIoffe Physical Technical Institute RAS
  • , E. M. TanklevskayaAffiliated withIoffe Physical Technical Institute RAS
  • , P. WernerAffiliated withMax Planck Institute for Microstructure Physics

Abstract

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.

Keywords

Molecular beam epitaxy Nanowires GaAs Solar cells Photovoltaic properties