Nano Express

Nanoscale Research Letters

, Volume 4, Issue 8, pp 921-925

Open Access This content is freely available online to anyone, anywhere at any time.

Magnetoresistance in Sn-Doped In2O3 Nanowires

  • Olívia M. BerengueAffiliated withDepartamento de Física, Universidade Federal de São Carlos Email author 
  • , Alexandre J. C. LanfrediAffiliated withCentro de Engenharia, Modelagem e Ciências Sociais Aplicadas, Universidade Federal do ABC
  • , Livia P. PozziAffiliated withDepartamento de Física, Universidade Federal de São Carlos
  • , José F. Q. ReyAffiliated withCentro de Engenharia, Modelagem e Ciências Sociais Aplicadas, Universidade Federal do ABC
  • , Edson R. LeiteAffiliated withLaboratório Interdisciplinar de Eletroquímica e Cerâmicas, Departamento de Química, Universidade Federal de São Carlos
  • , Adenilson J. ChiquitoAffiliated withDepartamento de Física, Universidade Federal de São Carlos

Abstract

In this work, we present transport measurements of individual Sn-doped In2O3 nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.

Keywords

Oxide nanowires Weak localization Electron transport Electron–electron scattering