Nano Express

Nanoscale Research Letters

, 4:694

First online:

Open Access This content is freely available online to anyone, anywhere at any time.

Synthesis and Characterization of Tin Disulfide (SnS2) Nanowires

  • Ya-Ting LinAffiliated withThe Graduate Institute of Electrical and Communications Engineering, Feng Chia University Email author 
  • , Jen-Bin ShiAffiliated withDepartment of Electronic Engineering, Feng Chia University
  • , Yu-Cheng ChenAffiliated withThe Graduate Institute of Electrical and Communications Engineering, Feng Chia University
  • , Chih-Jung ChenAffiliated withThe Graduate Institute of Electrical and Communications Engineering, Feng Chia University
  • , Po-Feng WuAffiliated withThe Graduate Institute of Electrical and Communications Engineering, Feng Chia University

Abstract

The ordered tin disulfide (SnS2) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS2nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS2nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS2nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).

Keywords

Nanomaterials SnS2 Nanowire AAO Template