Nano Express

Nanoscale Research Letters

, Volume 2, Issue 2, pp 112-117

Open Access This content is freely available online to anyone, anywhere at any time.

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

  • N. W. StromAffiliated withDepartment of Physics, University of Arkansas
  • , Zh. M. WangAffiliated withDepartment of Physics, University of Arkansas
  • , J. H. LeeAffiliated withDepartment of Physics, University of Arkansas Email author 
  • , Z. Y. AbuWaarAffiliated withDepartment of Physics, University of Arkansas
  • , Yu. I. MazurAffiliated withDepartment of Physics, University of Arkansas
  • , G. J. SalamoAffiliated withDepartment of Physics, University of Arkansas

Abstract

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

Keywords

GaAs/GaAs droplet homo-epitaxy InAs quantum dots Molecular beam epitaxy Self-assembly