Abstract
The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.
Avoid common mistakes on your manuscript.
References
S.-S. Li, G.-L. Long, F.-S. Bai, S.-L. Feng, H.-Z. Zheng, Pro. Natl. Acad. Sci. USA, 98(21), 11847 (2001); S. Chutia, M. Friesen, R. Joynt, Phys. Rev. B 73, 241304(R) (2006)
Sugawara M, Mukai K, Nakata Y, Ishikawa H, Sakamoto A: Phys. Rev. B. 2000, 61: 7595. COI number [1:CAS:528:DC%2BD3cXhvVSjt7c%3D] 10.1103/PhysRevB.61.7595
Thompson RM, Stevenson RM, Shields AJ, Farrer I, Lobo CJ, Ritchie DA, Leadbeater ML, Pepper M: Phys. Rev. B. 2001, 64: 201302(R).
Yuan Z, Kardynal BE, Mark Stevenson R, Shields AJ, Lobo CJ, Cooper K, Beattie NS, Ritchie DA, Pepper M: Science. 2002, 295: 102. COI number [1:CAS:528:DC%2BD38XksVeruw%3D%3D] 10.1126/science.1066790
Unitt DC, Bennett AJ, Atkinson P, Ritchie DA, Shields AJ: Phys. Rev B. 2005, 72: 33318. 10.1103/PhysRevB.72.033318
Kroutvar M, Ducommun Y, Finley JJ, Bichler M, Abstreiter G, Zrenner A: Appl. Phys. Lett. 2003, 83: 443. COI number [1:CAS:528:DC%2BD3sXlsFKisb8%3D] 10.1063/1.1588368
Shields AJ, O’Sullivan MP: Appl. Phys. Lett.. 2000, 76: 3673. COI number [1:CAS:528:DC%2BD3cXktV2nt74%3D] 10.1063/1.126745
Pradhan N, Goorskey D, Thessing J, Peng X: J. Am. Chem. Soc.. 2005, 127: 17586. COI number [1:CAS:528:DC%2BD2MXht1CkurvE] 10.1021/ja055557z
Lee JH, Wang ZhM, Liang BL, Black WT, Kunets VP, Mazur YI, Salamo GJ: Nanotechnology. 2006, 17: 2275. COI number [1:CAS:528:DC%2BD28Xmtl2nurk%3D] 10.1088/0957-4484/17/9/034
Sun Z, Yang B: Nanoscale Res. Lett.. 2006, 1: 46. 10.1007/s11671-006-9008-6
Wang ZhM, Lee JH, Liang BL, Black WT, Kunets VP, Mazur YI, Salamo GJ: Appl. Phys. Lett.. 2006, 88: 233102. 10.1063/1.2209157
Kohmoto S, Nakamura H, Ishikawa T, Asakawa K: Appl. Phys. Lett.. 1999, 75: 3488. COI number [1:CAS:528:DyaK1MXnsFyku7g%3D] 10.1063/1.125364
Song HZ, Usuki T, Ohshima T, Sakuma Y, Kawabe M, Okada Y, Takemoto K, Miyazawa T, Hirose S, Nakata Y, Takatsu M, Yokoyama N: Nanoscale Res. Lett.. 2006, 2: 160. 10.1007/s11671-006-9012-x
K.P. Chang, S.L. Yang, D.S. Chuu, R.S. Hsiao, J.F. Chen, J. Appl. Phys. 97, 83511 (2005); E. Ribeiro, E. Muller, T. Heinzel, H. Auderset, K. Ensslin, G. Medeiros-Ribeiro, P.M. Petroff, Phys. Rev. B 58, 1506 (1998)
H. Shin, J.B. Kim, Y.H. Yoo, W. Lee, E. Yoon, Y.M. Yu, J. Appl. Phys. 99, 023521 (2006); M. Henini, Nanoscale Res. Lett. 1, 32 (2006)
N. Koguchi; K. Ishige, Jpn. J. Appl. Phys. 32(5A), 2052 (1993); T. Mano, T. Kuroda, S. Sanguinetti, T. Ochiai, T. Tateno, J. Kim, T. Noda, M. Kawabe, K. Sakoda, G. Kido, N.Koguchi, Nano Lett. 5, 425 (2005)
S.Y. Lehman, R. Alexana, R.P. Mirin, J.E. Bonevich, Mater. Res. Soc. Symp. – Proc., 737, 179 (2003); Y.H. Chen, X.L. Ye, Z.G. Wang, Nanoscale Res. Lett. 1, 79 (2006)
Lundstrom T, Schoenfeld W, Lee H, Petroff PM: Science. 1999, 286: 2312. COI number [1:CAS:528:DC%2BD3cXjslag] 10.1126/science.286.5448.2312
Songmuang R, Kiravittaya S, Schmidt OG: Appl. Phys. Lett.. 2003, 82: 892. 10.1063/1.1569992
Warburton RJ, Scha¨flein C, Haft D, Bickel F, Lorke A, Karrai K, Garcia JM, Schoenfeld W, Petroff PM: Nature. 2000, 405: 926. COI number [1:CAS:528:DC%2BD3cXks1Wmu7s%3D] 10.1038/35016030
Volmer M, Weber A: Z. Phys. Chem.. 1926, 119: 277. COI number [1:CAS:528:DyaB28XhsFOmtQ%3D%3D]
Wang ZM, Holmes K, Shultz JL, Salamo GJ: Phys. Stat. Sol. (a). 2005, 202: R85. COI number [1:CAS:528:DC%2BD2MXmtVegu7w%3D] 10.1002/pssa.200510031
Gong Z, Niu ZC, Huang SS, Fang ZD, Sun BQ, Xia JB: Appl. Phys. Lett.. 2005, 87: 93116. 10.1063/1.2037193
Djie HS, Gunawan O, Wang D-N, Ooi BS, Hwang JCM: Phys. Rev. B. 2006, 73: 155324. 10.1103/PhysRevB.73.155324
Patella F, Fanfoni M, Arciprete F, Nufris S, Placidi E, Balzarotti A, Patella F, et al.: Appl. Phys. Lett.. 2001, 78: 320. COI number [1:CAS:528:DC%2BD3MXjt1ygtQ%3D%3D] 10.1063/1.1339850
Godefroo S, Maes J, Hayne M, Moshchalkov VV, Henini M, Pulizzi F, Patanè A, Eaves L: J. Appl. Phys.. 2005, 96: 2535. 10.1063/1.1767972
Acknowledgments
The authors thank Dr. John Shultz for his strong support in the facility maintenance and the financial support of the NSF (through Grant DMR-0520550). The WSxM© image processing program was used in this paper (http://www.nanotec.es).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Open Access This article is distributed under the terms of the Creative Commons Attribution 2.0 International License ( https://creativecommons.org/licenses/by/2.0 ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
About this article
Cite this article
Strom, N.W., Wang, Z.M., Lee, J.H. et al. Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates. Nanoscale Res Lett 2, 112 (2007). https://doi.org/10.1007/s11671-007-9040-1
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11671-007-9040-1