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Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic

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Abstract

Electron wavefunctions are switched spatially from one quantum well to another by varying the gate voltage V g in spatial wavefunction-switched (SWS) field-effect transistors (FETs), which comprise two or more coupled quantum wells serving as the transport channel. This is shown for Si/SiGe and InGaAs/AlInAs quantum well systems. The presence of charge in a particular well or channel is used to encode four states 00, 01, 10, 11. This unique property is used for two-bit processing, resulting in compact two-bit static random-access memory devices. Experimental data including capacitance–voltage peaks in Si and InGaAs multiple quantum well SWS-FETs has verified the SWS phenomenon. Replacing quantum wells by an array of cladded quantum dots, forming a quantum dot superlattice (QDSL) layer, enhances the contrast and noise margin in SWS-FETs. This paper reports I–V and C–V characteristics for a fabricated twin-drain SWS-quantum dot channel (QDC) FET comprising four layers of self-assembled SiO x -Si quantum dots. SWS-QDC-FETs are shown to be scalable to ∼9 nm, and comprise four layers of cladded quantum dots with an array of 3 × 3 forming the channel.

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Authors and Affiliations

  1. ECE Department, UConn, Storrs, CT, 06269, USA

    F. Jain, P.-Y. Chan, M. Lingalugari, J. Kondo, E. Suarez,  P. Gogna & J. Chandy

  2. Intel, Hudson, MA, USA

    P. Gogna

  3. Synopsys, Ossining, NY, 10562, USA

    E. Heller

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  1. F. Jain
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  2. P.-Y. Chan
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  3. M. Lingalugari
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  4. J. Kondo
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  5. E. Suarez
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  6. P. Gogna
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  7. J. Chandy
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  8. E. Heller
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Correspondence to F. Jain.

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Jain, F., Chan, PY., Lingalugari, M. et al. Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic. J. Electron. Mater. 44, 3108–3115 (2015). https://doi.org/10.1007/s11664-015-3827-0

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  • DOI: https://doi.org/10.1007/s11664-015-3827-0

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