Abstract
Ag/[BaTiO3/γ-Fe2O3]/ZnO composite films were grown on an n-type silicon (100) single-crystal substrate by magnetron sputtering, and annealed at various temperatures. Capacitance–voltage (C–V) curves show that the capacitance gradually increases with increasing annealed temperature. In addition, ZnO exhibits n-type conductivity in the dark but p-type conductivity under incandescent lamp illumination. The photoinduced p-type conductivity in n-type ZnO should be related to a special n-type ZnO layer originating from high-temperature annealing. The current–voltage (I–V) curves of the [BaTiO3/γ-Fe2O3]/ZnO thin films display a strong photoconductivity effect.
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Zhao, W.X., Sun, B., Shen, Z. et al. Photoinduced p-Type Conductivity in n-Type ZnO. J. Electron. Mater. 44, 1003–1007 (2015). https://doi.org/10.1007/s11664-014-3608-1
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DOI: https://doi.org/10.1007/s11664-014-3608-1