Abstract
Recently, X-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization, and to probe their structure. Here, we explore a method of defect-engineering low-dimensional systems using focused laboratory-scale X-ray sources. We demonstrate an irreversible change in the conducting properties of the two-dimensional electron gas at the interface between the complex oxide materials LaAlO 3 and SrTiO 3 by X-ray irradiation. The electrical resistance is monitored during exposure as the irradiated regions are driven into a high-resistance state. Our results suggest attention shall be paid on electronic structure modification in X-ray spectroscopic studies and highlight large-area defect manipulation and direct device patterning as possible new fields of application for focused laboratory X-ray sources.
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Acknowledgments
We thank the PANalytical company for providing us with access to the focused X-ray source. We are grateful to Alexander Kharchenko, Detlef Beckers, Eugene Reuvekamp, Joachim Woitok and Martijn Fransen at PANalytical for their support. We thank Frank Roesthuis and Dick Veldhuis for help and support during the experiments and Alexander Brinkman and Gertjan Koster for useful discussions. The work was supported by the Dutch FOM and NWO foundations. N.P. acknowledges the financial support from the Marie Curie IEF project for career development. X.R.W. acknowledges the financial support from the Dutch Rubicon grant.
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The authors declare that they have no competing financial interests.
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Poccia, N., Ricci, A., Coneri, F. et al. Manipulating Electronic States at Oxide Interfaces Using Focused Micro X-Rays from Standard Lab Sources. J Supercond Nov Magn 28, 1267–1272 (2015). https://doi.org/10.1007/s10948-014-2902-8
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DOI: https://doi.org/10.1007/s10948-014-2902-8