Abstract
Nano-boron (800 nm) and μm-boron (25 μm) precursor were used to synthetize glycine-doped, Cu-and-glycine-co-doped, and undoped MgB2 samples at 800 ∘C. The C substitution level caused by glycine doping, the MgO content, and the full width at half maximum of the (101) peak for MgB2 phase were compared to evaluate the critical current density (J c) of the six samples. The undoped sample from the nm-boron powder showed enhanced J c over the entire field in contrast with those from 25-um boron, since the excess MgO in nm-boron prepared sample serves as effective pinning centers. On the contrary, due to the reduced MgO pinning centers as well as the increase of the grain size, the glycine-doped nm-boron sample only enhanced the J c performance in the high-field region (H>4.5 T), while the low-field J c values showed a considerable decrease. For the Cu-and-glycine-co-doped sample, the J c performance is nearly without regard to the size of the boron precursor as the high-field J c of the nm-B sample decreased a little, while the low-field J c remained at the same level as that of the μm-B sample.
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The authors are grateful to the Project of Natural Science Foundation of Tianjin City (Granted No. 14JCYBJC18400) for grant and financial support.
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Wu, F., Cai, Q. Comparison of Critical Current Density in Undoped, Glycine-doped, and Cu-and-Glycine-Co-doped MgB2 Synthetized from nm-Boron and μm-Boron. J Supercond Nov Magn 27, 2023–2027 (2014). https://doi.org/10.1007/s10948-014-2576-2
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DOI: https://doi.org/10.1007/s10948-014-2576-2