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UV absorption characteristics and element composition of (200) and (111) orientation cubic MgZnO thin films deposited at different temperature by PLD method

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Abstract

Cubic structure MgZnO thin films were made on fused quartz substrate at different temperature by PLD method, the preferred orientation of MgZnO thin films changed from (200) to (111) when growth temperature increased because of different substrate surface situation. MgZnO thin film deposited more along (200) orientation at 300 °C with narrower band gap because it contain more Zn atoms in MgZnO lattice than the ones deposited at other temperature, and the UV absorption edge of which is located in longer wavelength position. MgZnO thin film deposited more along (111) orientation at 700 °C with better crystal quality than the ones deposited at other temperature, but the band gap of this sample is wider than the other ones though it also contain more Zn atoms in MgZnO lattice as the one deposited at 300 °C, which is reason from the function of much lower grain boundary density in this MgZnO thin film.

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References

  1. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, M. Kawasaki, Nat. Mater. 4, 42–46 (2005)

    Article  Google Scholar 

  2. C.R. Gorla, N.W. Emanetoglu, S. Liang, W.E. Mayo, Y. Lu, M. Wraback, H. Shen, J. Appl. Phys. 85, 2595 (1999)

    Article  Google Scholar 

  3. Q. Wan, Q.H. Li, Y.J. Chen, T.H. Wang, X.L. He, J.P. Li, C.L. Lin, Appl. Phys. Lett. 84, 3654 (2004)

    Article  Google Scholar 

  4. M. Izaki, T. Omi, Appl. Phys. Lett. 68, 2439 (1996)

    Article  Google Scholar 

  5. A. Ohtomo, M. Kawasaki, K. Masubuchi, Appl. Phys. Lett. 72, 2466 (1998)

    Article  Google Scholar 

  6. S. Choopun, R.D. Vispute, W. Yang, R.P. Sharma, T. Venkatesan, H. Shen, Appl. Phys. Lett. 80, 1529 (2002)

    Article  Google Scholar 

  7. J. Narayan, A.K. Sharma, A. Kvit, C. Jin, J.F. Muth, O.W. Holland, Solid State Commun. 121, 9 (2002)

    Article  Google Scholar 

  8. W. Yang, R.D. Vispute, S. Choopun, R.P. Sharma, T. Venkatesan, H. Shen, Appl. Phys. Lett. 78, 2787–2789 (2001)

    Article  Google Scholar 

  9. J.F. Sarver, F.L. Katnack, F.A. Hummel, J. Electrochem. Soc. 106, 960 (1959)

    Article  Google Scholar 

  10. Z.G. Ju, C.X. Shan, C.L. Yang, J.Y. Zhang, B. Yao, D.X. Zhao, D.Z. Shen, X.W. Fan, Appl. Phys. Lett. 94, 101902 (2009)

    Article  Google Scholar 

  11. X. Chen, J. Kang, Semicond. Sci. Technol. 23, 025008 (2008)

    Article  Google Scholar 

  12. X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, A.Y. Kuznetsov, Adv. Mater. 21, 4625–4630 (2009)

    Article  Google Scholar 

  13. Z.G. Ju, C.X. Shan, D.Y. Jiang, J.Y. Zhang, B. Yao, D.X. Zhao, D.Z. Shen, X.W. Fan, Appl. Phys. Lett. 93, 173505 (2008)

    Article  Google Scholar 

  14. S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, D. Shen, Appl. Phys. Lett. 99, 242105 (2011)

    Article  Google Scholar 

  15. L.K. Wang, Z.G. Ju, J.Y. Zhang, J. Zheng, D.Z. Shen, B. Yao, D.X. Zhao, Z.Z. Zhang, B.H. Li, C.X. Shan, Appl. Phys. Lett. 95, 131113 (2009)

    Article  Google Scholar 

  16. S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, D. Zhao, C. Shan, B. Li, D. Shen, ACS Appl. Mater. Interfaces 2, 1918–1921 (2010)

    Article  Google Scholar 

  17. L.K. Wang, Z.G. Ju, C.X. Shan, J. Zheng, B.H. Li, Z.Z. Zhang, B. Yao, D.X. Zhao, D.Z. Shen, J.Y. Zhang, J. Cryst. Growth 312, 875–877 (2010)

    Article  Google Scholar 

  18. Z. Vashaei, T. Minegishi, H. Suzuki, T. Hanada, M.W. Cho, T. Yao, J. Appl. Phys. 98, 054911 (2005)

    Article  Google Scholar 

  19. S. Han, D.Z. Shen, J.Y. Zhang, Y.M. Zhao, D.Y. Jiang, Z.G. Ju, D.X. Zhao, B. Yao, J. Alloys Compd. 485, 794–797 (2009)

    Article  Google Scholar 

  20. J. Liang, H.Z. Wu, Y.F. Lao, N.B. Chen, P. Yu, T.N. Xu, Appl. Surf. Sci. 252, 1147–1152 (2005)

    Article  Google Scholar 

  21. P.M. Petroff, A.Y. Cho, F.K. Reinhart, A.C. Gossard, W. Wiegman, Phys. Rev. Lett. 48, 170 (1982)

    Article  Google Scholar 

  22. Y. Nomura, Y. Morishita, S. Goto, Y. Katayama, T. Isu, Appl. Phys. Lett. 64, 1123 (1994)

    Article  Google Scholar 

  23. A. Chin, T.M. Cheng, S.P. Peng, Z. Osman, U. Das, C.Y. Chang, Appl. Phys. Lett. 63, 2381 (1993)

    Article  Google Scholar 

  24. Albert Chin, K.Y. Hsieh, H.Y. Lin, Appl. Phys. Lett. 65, 1921 (1994)

    Article  Google Scholar 

  25. R. Huang, A.H. Kitai, Appl. Phys. Lett. 61, 1450 (1992)

    Article  Google Scholar 

  26. I. Takeuchi, W. Yang, K.S. Chang, M.A. Aronova, T. Venkatesan, R.D. Vispute, L.A. Bendersky, J. Appl. Phys. 94, 7336 (2003)

    Article  Google Scholar 

  27. X.Y. Chen, K.H. Wong, C.L. Mak, X.B. Yin, M. Wang, J.M. Liu, Z.G. Liu, J. Appl. Phys. 91, 5728 (2002)

    Article  Google Scholar 

  28. O. Renault, M. Labeau, J. Electrochem. Soc. 146, 3731–3735 (1999)

    Article  Google Scholar 

  29. S.C. Choi, M.H. Cho, S.W. Whangbo, C.N. Whang, Appl. Phys. Lett. 71, 903 (1997)

    Article  Google Scholar 

  30. Y.Y. Kim, C.H. An, H.K. Cho, J.H. Kim, H.S. Lee, E.S. Jung, H.S. Kim, Thin Solid Films 516, 5602–5606 (2008)

    Article  Google Scholar 

  31. A.K. Sharma, J. Narayan, J.F. Muth, C.W. Teng, C. Jin, A. Kvit, R.M. Kolbas, O.W. Holland, Appl. Phys. Lett. 75, 3327 (1999)

    Article  Google Scholar 

  32. V.I. Nefeddov, M.N. Firsov, I.S. Shaplygin, J. Electron. Spectrosc. Relat. Phenom. 26, 625 (1982)

    Google Scholar 

  33. S.-M. Park, T. Ikegami, K. Ebihara, Thin Solid Films 513, 90–94 (2006)

    Article  Google Scholar 

  34. S.S. Hullavarad, N.V. Hullavarad, D.E. Pugel, S. Dhar, T. Venkatesan, R.D. Vispute, Opt. Mater. 30, 993 (2008)

    Article  Google Scholar 

  35. D.W. Langer, C.J. Vesely, Phys. Rev. B. 2, 4885 (1970)

    Article  Google Scholar 

  36. V. Srikant, D.R. Clarke, J. Appl. Phys. 81, 6357 (1997)

    Article  Google Scholar 

  37. G.H. Dohler, IEEE J. Quantum Electron. QE-22, 1682 (1986)

    Article  Google Scholar 

  38. A. Monshi, M.R. Foroughi, M.R. Monshi, World J. Nano Sci. Eng. 2, 154–160 (2012)

    Article  Google Scholar 

Download references

Acknowledgments

This work was supported by the National Natural Science Foundation of China under Grant Nos. 60976036, 51302174, 51371120. The Science and Technology Research Items of Shenzhen,Natural Science Foundation of SZU (Grant No. 201201) and the Items of Shenzhen Key Laboratory of Special Functional Materials (Grant Nos. T201205, T201101 and T201109).

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Correspondence to Y. M. Lu.

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Han, S., Peng, S., Lu, Y.M. et al. UV absorption characteristics and element composition of (200) and (111) orientation cubic MgZnO thin films deposited at different temperature by PLD method. J Mater Sci: Mater Electron 26, 4330–4336 (2015). https://doi.org/10.1007/s10854-015-2988-1

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