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Ferroelectric properties of pulsed laser deposited PZT (92/8) thin films

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Abstract

The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited PZT (92/8) thin films has been studied. The structural analysis revealed that the films had a well crystallized perovskite phase without secondary phases. The atomic force microscopy has been employed to estimate the grain size and surface roughness of the film. A well-saturated P–E hysteresis loop was observed with average values of remnant polarization (Pr) ≈ 16.0 μC/cm2, saturation polarization (Ps) ≈ 21.7 μC/cm2 and coercive field ≈138 kV/cm. The P–E loops were very stable with frequency, confirming that the contribution of the leakage current and/or mobile free charges to the polarization is minimum. The polarization current exhibits the exponential dependence on the pulse amplitude and the leakage current seems to be governed by the hopping mechanism which is generally associated to structural defects.

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Acknowledgments

The authors J.P.B.S. thanks FCT for the financial support (Grant SFRH/BD/44861/2008). S.A.S.R. thanks FCT for the financial support (Grant (SFRH/BD/30531/2006). K.C.S thanks to FCT for Post-doc Grant (SFRH/BPD/68489/2010). The authors would like also to thank to Engineers José Santos and José Cunha for technical support at Thin Film Laboratory. This work has been partially funded by: (1) FEDER through the COMPETE Program and by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Project PEST-C/FIS/UI607/2011; and (2) European COST Actions MP0901-NanoTP and MP0903-NanoAlloy.

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  1. Centre of Physics, University of Minho, Campus de Gualtar, 4710-057, Braga, Portugal

    J. P. B. Silva, S. A. S. Rodrigues, K. C. Sekhar, M. Pereira & M. J. M. Gomes

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  1. J. P. B. Silva
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  2. S. A. S. Rodrigues
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  3. K. C. Sekhar
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  4. M. Pereira
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  5. M. J. M. Gomes
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Silva, J.P.B., Rodrigues, S.A.S., Sekhar, K.C. et al. Ferroelectric properties of pulsed laser deposited PZT (92/8) thin films. J Mater Sci: Mater Electron 24, 5097–5101 (2013). https://doi.org/10.1007/s10854-013-1529-z

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  • DOI: https://doi.org/10.1007/s10854-013-1529-z

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