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Characteristics of pulse electrodeposited AgGaSe2 films

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Abstract

In this work, the pulse electrodeposition technique has been employed for the first time to deposit AgGaSe2 films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver nitrate, 10 mM gallium nitrate and 10 mM SeO2. The deposition potential was maintained as—0.68 V (SCE). Tin oxide coated glass substrates (5.0 ohms/sq) was used as the substrate. The duty cycle was varied in the range of 6–50 %. The XRD profile of the thin films deposited at different duty cycles indicate the peaks corresponding to AgGaSe2. Atomic force microscopy studies indicated that the surface roughness increased from 0.95 to 1.25 nm with duty cycle. The transmission spectra exhibited interference fringes. Refractive index of 2.71 was observed in the wavelength range 600–1,000 nm. Electrochemical Impedance studies indicated a single semicircle. The grain boundary resistance decreased with increase of duty cycle.

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Authors and Affiliations

  1. Department of Physics, AVC College (Autonomous), Mannanpandal, Mayiladuthurai, 609001, India

    S. Murugan

  2. Department of Physics, Annamalai University, Chidambaram, India

    S. Dhanapandian & C. Manoharan

  3. ECMS Division, CSIR-CECRI, Karaikudi, India

    K. R. Murali

Authors
  1. S. Murugan
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  2. S. Dhanapandian
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  3. C. Manoharan
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  4. K. R. Murali
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Correspondence to K. R. Murali.

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Murugan, S., Dhanapandian, S., Manoharan, C. et al. Characteristics of pulse electrodeposited AgGaSe2 films. J Mater Sci: Mater Electron 24, 483–488 (2013). https://doi.org/10.1007/s10854-012-0821-7

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  • DOI: https://doi.org/10.1007/s10854-012-0821-7

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