Abstract
There is considerable experimental evidence that vacancies in Ge dominate several solid state reactions that range from self-diffusivity to metal and dopant transport. It is therefore vital that we fully understand how vacancies interact with other point defects in Ge. Here we have a look at the properties of small donor-vacancy (Sb n V m with m,n ≤ 2) complexes in Ge by ab-initio density functional modeling. Particular attention has been payed to binding energies and to the electronic activity of the complexes. We found that all aggregates may contribute to the n→ p type conversion that is typically observed under prolonged MeV irradiation conditions. In general, Sb n V m defects are double acceptors. It is also suggested that spontaneous formation of Sb3V complexes may limit the activation level of donors introduced by ion implantation.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D.S. Yu, K.C. Chiang, C.F. Cheng, A. Chin, C. Zhu, M.F. Li, D.-L. Kwong, IEEE Electron Dev. Lett. 25, 559 (2004)
C.O. Chui, K. Gopalakrishnan, P.B. Griffin, J.D. Plummer, and K.C. Saraswat, Appl. Phys. Lett. 83, 3275 (2003)
M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie, and A. Lochtefeld, J. Appl. Phys. 97, 011101 (2005)
A. Satta, E. Simoen, T. Clarysse, T. Janssens, A. Benedetti, B. De Jaeger, M. Meuris, and W. Vandervorst, Appl. Phys. Lett. 87, 172109 (2005)
I. Kovac̆ević, B. Pivac, R. Jac̆imović, M.K. Khan, V.P. Markevich, A.R. Peaker, to appear in Mat. Sci. Semicon. Proc.
J. Fage-Padersen, A. Nylandsted Larsen, and A. Mesli, Phys. Rev. B 62, 10116 (2000)
V.P. Markevich, I.D. Hawkins, A.R. Peaker, K.V. Emtsev, V.V. Emtsev, V.V. Litvinov, L.I. Murin, and L. Dobaczewski, Phys. Rev. B 70, 235213 (2004)
J. Coutinho, S. Öberg, V.J.B. Torres, M. Barroso, R. Jones, and P.R. Briddon, Phys. Rev. B 73, 235213 (2006)
C.E. Lindberg, J. Lundsgaard Hansen, P. Bomholt, A. Mesli, K. Bonde Nielsen, and A. Nylandsted Larsen, Appl. Phys. Lett. 87, 172103 (2005)
A. Chroneos, R.W. Grimes, and C. Tsamis, to appear in Mat. Sci. Semicon. Proc.
M. Ramamoorthy and S.T. Pantelides, Phys. Rev. Lett. 76, 4753 (1996)
P.R. Briddon and R. Jones, Phys. Stat. Sol. (b), 217, 131 (2000)
S. Goedecker, M. Teter, and J. Hutter, Phys. Rev. B 54, 1703 (1996)
J.P. Perdew and Y. Wang, Phys. Rev. B 45, 13244 (1992)
J. Donohue, The Structures of Elements. (Wiley, New York, 1974).
H. J. McSkimin, J. Appl. Phys. 24, 988 (1953)
C. Hartwigsen, S. Goedecker, and J. Hutter, Phys. Rev. B 58, 3641 (1998)
A. Carvalho, R. Jones, J. Coutinho, V.J.B. Torres, S. Öberg, J.M. Campanera Alsina, M. Shaw, P.R. Briddon, submitted.
S.G. Louie, S. Froyen, M.L. Cohen, Phys. Rev. B 26, 1738 (1982)
H.M. Pinto, J. Coutinho, V.J.B. Torres, S. Öberg, P.R. Briddon, to appear in Mat. Sci. Semicon. Proc.
A. Resende, R. Jones, S. Öberg, P.R. Briddon, Phys. Rev. Lett. 82, 2111 (1999)
O. Madelung (Ed.), Semiconductors – Basic Data, 2nd Edition. Springer-Verlag, Berlin, (1996)
A. Fazzio, A. Janotti, A.J.R. da Silva, R. Mota, Phys. Rev. B 61, R2401 (2000)
C. Janke, R. Jones, J. Coutinho, S. Öberg, P.R. Briddon, to appear in Mat. Sci. Eng. B
Acknowledgements
The authors would like to acknowledge INTAS (grant No. 03–50–4529), and the FCT in Portugal for financial support. We also thank the Swedish National Infrastructure for Computing (SNIC) under the Swedish Science Council for computer resources.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Coutinho, J., Torres, V.J.B., Öberg, S. et al. Early stage donor-vacancy clusters in germanium. J Mater Sci: Mater Electron 18, 769–773 (2007). https://doi.org/10.1007/s10854-006-9069-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-006-9069-4