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Controlling A-center concentration in silicon through isovalent doping: mass action analysis

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Abstract

It has been determined experimentally that doping silicon with large isovalent dopants such as tin can limit the concentration of vacancy-oxygen defects, this in turn, can be deleterious for the materials properties and its application. These results have been supported by recent calculations based on density functional theory employing hybrid functional. In the present study, we employ mass action analysis to calculate the impact of germanium, tin and lead doping on the relative concentrations of vacancy-oxygen defects and defect clusters in silicon under equilibrium conditions. In particular, we calculate how much isovalent doping is required to constrain vacancy-oxygen concentration in silicon and conclude that Sn and Pb doping are the most effective isovalent dopants. The results are discussed in view of recent experimental and computational results.

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Acknowledgments

SRGC and AC are grateful for funding from the Lloyd’s Register Foundation, a charitable foundation helping to protect life and property by supporting engineering-related education, public engagement and the application of research.

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Authors and Affiliations

  1. Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry, CV1 5FB, UK

    S.-R. G. Christopoulos, D. C. Parfitt & A. Chroneos

  2. Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, 157 84, Athens, Greece

    E. N. Sgourou & C. A. Londos

  3. Physics Department, V. Karazin Kharkiv National University, Svobody Sq. 4, Kharkiv, 61077, Ukraine

    R. V. Vovk

Authors
  1. S.-R. G. Christopoulos
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  2. D. C. Parfitt
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Correspondence to A. Chroneos.

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Christopoulos, SR.G., Parfitt, D.C., Sgourou, E.N. et al. Controlling A-center concentration in silicon through isovalent doping: mass action analysis. J Mater Sci: Mater Electron 27, 4385–4391 (2016). https://doi.org/10.1007/s10854-016-4308-9

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  • DOI: https://doi.org/10.1007/s10854-016-4308-9

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