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The application of an ordered mesoporous silica film to a GaAs device

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Abstract

Pseudomorphic high electron mobility transistors (PHEMTs) are promising devices for use in millimeter-wave and optical communications systems due to their excellent high frequency and low-noise performances. In order to further improve the performance of these devices, their gate lengths must be reduced to the technological limit and a small gate resistance must be realized. However, shorter gates result in an increase of short channel effects that limit microwave performance. In order to reduce the gate resistance, T-shaped gates with large cross-sectional areas are required. However, the thickness and dielectric constant of the passivation layer have major impacts on the gate capacitance. In this study, an ordered mesoporous silica film was introduced as a passivation layer between T-gates. Si3N4 with a dielectric constant of 7.4 and ordered mesoporous silica with a dielectric constant of 2.48 were used as passivation layers. The Si3N4 dielectric layer and the ordered mesoporous silica film were stacked together and the device characteristics were investigated.

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Acknowledgements

This study was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea

    Sang-Bae Jung, Tae-Jung Ha & Hyung-Ho Park

  2. Semiconductor Technology Division, Electronics and Telecommunications Research Institute, Taejon, 305-350, Republic of Korea

    Haechoen Kim

  3. Korea Institute of Ceramic Engineering and Technology, Seoul, 153-801, Republic of Korea

    Won-Seon Seo & Young Soo Lim

Authors
  1. Sang-Bae Jung
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  2. Tae-Jung Ha
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  3. Hyung-Ho Park
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  4. Haechoen Kim
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  5. Won-Seon Seo
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  6. Young Soo Lim
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Correspondence to Hyung-Ho Park.

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Jung, SB., Ha, TJ., Park, HH. et al. The application of an ordered mesoporous silica film to a GaAs device. J Electroceram 25, 140–144 (2010). https://doi.org/10.1007/s10832-010-9603-x

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  • DOI: https://doi.org/10.1007/s10832-010-9603-x

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