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Performance Analysis of HfO2 and Si3N4 Dielectrics in β-Ga2O3 HEMT

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HEMT Technology and Applications

Abstract

β-Ga2O3 HEMT with 10 nm AlN as a barrier layer is designed in this paper. The dielectric layer of Si3N4 and HfO2 is introduced beneath the gate as a passivation layer. HfO2 shows high thermal stability and high reliability while Si3N4 shows good interface attribute. The double gate of 0.2 µm and 0.5 µm with a gap of 50 nm aids in enhancing the 2DEG. The relation between dielectric constant and bandgap shows the interdependence on diametric size of the material. The passivation layer controls the gate leakage current and improves the pinch-off characteristics of the device. The transfer characteristic, transconductance, and output conductance demonstrate the device tunability for application in power radio frequency and microwave.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, The LNM Institute of Information Technology, Jaipur, Rajasthan, 302031, India

    Meenakshi Chauhan, Abdul Naim Khan, Raghuvir Tomar & Kanjalochan Jena

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  1. Meenakshi Chauhan
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  2. Abdul Naim Khan
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  3. Raghuvir Tomar
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  4. Kanjalochan Jena
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Correspondence to Meenakshi Chauhan .

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Editors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute Of Technology Silchar, Silchar, Assam, India

    Trupti Ranjan Lenka

  2. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA

    Hieu Pham Trung Nguyen

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© 2023 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

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Chauhan, M., Khan, A.N., Tomar, R., Jena, K. (2023). Performance Analysis of HfO2 and Si3N4 Dielectrics in β-Ga2O3 HEMT. In: Lenka, T.R., Nguyen, H.P.T. (eds) HEMT Technology and Applications. Springer Tracts in Electrical and Electronics Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-19-2165-0_6

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  • DOI: https://doi.org/10.1007/978-981-19-2165-0_6

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-19-2164-3

  • Online ISBN: 978-981-19-2165-0

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