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Structure and dielectric properties of Ba(Sn0.2Ti0.8)O3 thin films grown on different substrates by a sol-gel process

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Abstract

Ba(Sn0.2Ti0.8)O3 (BTS) thin films were deposited on Pt/Ti/SiO2/Si and LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing technique, respectively. The influences of substrates on the phase and microstructure of the thin films were examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current electric field. The results showed that the substrates strongly influenced the microstructure and the dielectric properties of the films. The properties of BTS thin films on LaNiO3/Pt/Ti/SiO2/Si substrates were superior to that of the films grown on Pt/Ti/SiO2/Si substrates.

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Acknowledgements

This research was supported by the Ministry of Sciences and Technology of China through 973-project under grant 2002CB613304, Shanghai Nano Fundamental Committee under Contract No. 05nm05028, and Program for New Century Excellent Talents in University (NCET), Specialized Research Fund for the Doctoral Program of Higher Education (SRFDP20060247003) and Shanghai Pujiang Program (05PJ14094).

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  1. Function Materials Research Laboratory, Tongji University, Shanghai, 200092, China

    S. N. Song, J. W. Zhai & X. Yao

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  1. S. N. Song
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  2. J. W. Zhai
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  3. X. Yao
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Correspondence to S. N. Song.

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Song, S.N., Zhai, J.W. & Yao, X. Structure and dielectric properties of Ba(Sn0.2Ti0.8)O3 thin films grown on different substrates by a sol-gel process. J Electroceram 21, 649–652 (2008). https://doi.org/10.1007/s10832-007-9276-2

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  • DOI: https://doi.org/10.1007/s10832-007-9276-2

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