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The microstructure, insulating and dielectric characteristics of Na0.5Bi0.5TiO3 thin films: role of precursor solution

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Abstract

Na0.5Bi0.5TiO3 (NBT) thin films were fabricated on the indium tin oxide/glass substrates via a chemical solution deposition method by using different precursor solutions. Results show that the precursor solution has a remarkable influence on the crystallinity, morphology, insulating and dielectric properties of NBT thin films. Especially, the NBT thin film annealed at 500 °C from the precursor solution with acetates dissolved in 2-methoxyethanol and acetic acid shows optimal electrical properties, reflected by the reduced leakage current density, the maximum tunability of 23%, a high dielectric constant of 207 and a low dielectric loss of 0.05 as well as a large figure of merit of 4.6 at 100 kHz.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 51172097) and the Scientific Research Foundation of University of Jinan (XKY1505).

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Authors and Affiliations

  1. School of Material Science and Engineering, University of Jinan, Jinan, 250022, China

    Y. J. Han, C. H. Yang, J. H. Song & J. Qian

  2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan, 250022, China

    S. F. Huang, C. H. Yang, X. J. Lin & Y. C. Wang

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  1. Y. J. Han
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  2. S. F. Huang
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  3. C. H. Yang
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  7. J. Qian
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Correspondence to S. F. Huang or C. H. Yang.

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Han, Y.J., Huang, S.F., Yang, C.H. et al. The microstructure, insulating and dielectric characteristics of Na0.5Bi0.5TiO3 thin films: role of precursor solution. J Mater Sci: Mater Electron 28, 18057–18063 (2017). https://doi.org/10.1007/s10854-017-7749-x

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