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Non-local transport in numerical simulation of GaN LED

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Abstract

We propose a device modeling theory based on an improved drift–diffusion solution that is suitable for simulation of the efficiency droop effect in GaN LED. Our theory modifies the drift–diffusion transport by adding a non-local carrier transport component that mimics the effect of hot carriers near the multiple quantum well region. The non-local transport model is supported by recent experimental evidence of Auger-induced hot carriers as well as explaining the experimental low turn-on voltage that conventional drift–diffusion theory fails to predict. A surprising finding from the simulation is that the hot-Auger carriers have a positive effect of reducing the junction resistance of the LED and thus help improve the overall wall-plug efficiency.

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Acknowledgments

The author greatly benefited from communication with Dr. Joachim Piprek of the NUSOD Institute on the subject of hot-Auger carriers.

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  1. 230-3410 Lougheed Highway, Vancouver, BC, V5M 2A4, Canada

    Z. M. Simon Li

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  1. Z. M. Simon Li
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Correspondence to Z. M. Simon Li.

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Simon Li, Z.M. Non-local transport in numerical simulation of GaN LED. J Comput Electron 14, 409–415 (2015). https://doi.org/10.1007/s10825-015-0693-1

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  • DOI: https://doi.org/10.1007/s10825-015-0693-1

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