Abstract
Due to the progress of devices miniaturization combined with the increase in packing density in integrated circuits, modern transistors, such as Gate All Around Field Effect Transistors (GAAFETs), suffer from excessive thermal confinement. This causes in device a self-heating problem which can increases leakage and destroy device performance. In this context, we propose in this paper to investigate the self-heating effect (SHE) in the Triple-Material-Surrounding-Gate-Field-Effect-Transistor (TMSG-FET) using an electro-thermal model. Numerical simulation is based on solving the semiconductor equations (Poisson and continuities equations) coupled with the heat transfer equation. The Single-Phase-Lag (SPL) non-linear heat conduction model has been used to describe the nano-heat. The numerical solutions have been developed based on the finite element method. The results are also compared to the classical Fourier-Kirchhoff Law. The electrical and thermal properties of the TMSG transistor have been analyzed. The obtained results predict an appropriate electrical behavior of the simulated structure. However, the TMSG device suffers more from a self-heating problem illustrated with a significant local temperature. This result proves the poor thermal management of this nanowire structure. On the other hand, the wave properties in the temperature response are observed using the SPL model, which makes it more suitable for estimating the self-heating effect in the device.
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Belkhiria, M., Echouchene, F., Jaba, N. (2022). Nano-heat Transfer in GAAFET Transistor Using Single-Phase-Lag Model. In: Ben Amar, M., Bouguecha, A., Ghorbel, E., El Mahi, A., Chaari, F., Haddar, M. (eds) Advances in Materials, Mechanics and Manufacturing II. A3M 2021. Lecture Notes in Mechanical Engineering. Springer, Cham. https://doi.org/10.1007/978-3-030-84958-0_12
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