Abstract
This study was performed in order to investigate a possibility to obtain Co-W microbumps via electrochemical routes, because this alloy recently has gained attraction as a novel barrier against copper diffusion. In order to be applied in flip-chip technology, barrier layers should be void-free and uniformly deposited on the entire area of a die to ensure high reliability and high performance of wafer bump-solder interface. To meet these requirements, a set of potentiostatic and galvanostatic electrodeposition was carried out from a citrate electrolyte, at pH 5 and at room temperature. The tests done confirm that void-free Co-W bumps with a uniform tungsten content along the bump can be obtained by potentiostatic and galvanostatic electrodeposition. Successful electrodeposition of Cu/Co-W/Sn layers with good adhesion between them and uniformity on the entire array of bumps also was obtained. The XPS data confirm that electrodeposited Co-W layers can act as a good barrier between Sn and Cu.
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Acknowledgments
The authors acknowledge funding from the FP7 projects NANOALLOY (252407/909407) and the IRSES-project TEMADEP (247659). Also, partial funding was granted by the Lithuanian ESF agency (VP1-3.1-ŠMM-08-K-01-014), Lithuanian Research Council (MIP-031/2014) and MD project 72/ind. Authors are grateful to Dr. V. Kubilius (Vilnius University) for the resistance measurements done on the Co-W layers.
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Tsyntsaru, N., Kaziukaitis, G., Yang, C. et al. Co-W nanocrystalline electrodeposits as barrier for interconnects. J Solid State Electrochem 18, 3057–3064 (2014). https://doi.org/10.1007/s10008-014-2488-x
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DOI: https://doi.org/10.1007/s10008-014-2488-x