Skip to main content
SpringerLink
Log in

0.35 μm CMOS–MEMS low-mechanical-noise micro accelerometer

  • Technical Paper
  • Published:
Microsystem Technologies Aims and scope Submit manuscript

Abstract

A CMOS–microelectromechanical systems (MEMS) accelerometer chip produced using Taiwan Semiconductor Manufacturing Company 0.35 μm CMOS technology and the Chip Implementation Center micromachining postprocess is proposed in this study. The chip integrates a MEMS gravity sensor and a readout circuit on a silicon substrate. The measured results indicated that the resonant frequency, mechanical noise, static capacitance, sensitivity, and noise floor characteristics were 3.1 kHz, 6.673 μg/√Hz, 120 fF, 2.4 mV/g, and 29.447 μV/√Hz, respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11

Similar content being viewed by others

References

  • Amini BV, Pourkamali S, Ayazi F (2004) A high resolution, stictionless, CMOS compatible SOI accelerometer with a low noise, low power, 0.25 μm CMOS interface. Micro electro mechanical systems, 2004. 17th IEEE International Conference on (MEMS), pp 572–575

  • Chae J, Kulah H, Najafi K (2004) An in-plane high-sensitivity, low-noise micro-g silicon accelerometer with CMOS readout circuitry. J Microelectromech Syst 13(4):628–635

    Article  Google Scholar 

  • Judy MW (2004) Evolution of integrated inertial MEMS technology. In: Proceeding Solid-State Sens Actuator, and Microsyst. Workshop, Hilton Head Island, South Caroline, USA, pp 27–32

  • Ling W, Yan L, Dong W (2009) Capacitive silicon micro -accelerometer’s noise reduction technology research. ICICTA Second International Conference on, Changsha, pp 553–556

  • Marek J (2010) MEMS for automotive and consumer electronics. In IEEE ISSCC Dig Tech Papers, vol 53, pp 9–17

  • Tavakoli M, Sarpeshkar R (2003) An offset-canceling low-noise lock-in architecture for capacitive sensing. IEEE J Solid-State Circuits 38(2):244–253

    Article  Google Scholar 

  • Zhao Y et al (2015) A Sub-μg bias-instability MEMS oscillating accelerometer with an ultra-low-noise read-out circuit in CMOS. IEEE J Solid-State Circuits 50(9):2113–2126

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Communication Engineering, Feng Chia University, Taichung, 40724, Taiwan

    Ja-Hao Chen

  2. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, 70101, Taiwan

    Chih-Wei Huang

Authors
  1. Ja-Hao Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Chih-Wei Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Ja-Hao Chen.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Chen, JH., Huang, CW. 0.35 μm CMOS–MEMS low-mechanical-noise micro accelerometer. Microsyst Technol 24, 299–304 (2018). https://doi.org/10.1007/s00542-017-3312-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00542-017-3312-1

Search

Navigation