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Optical excitation study on the efficiency droop behaviors of InGaN/GaN multiple-quantum-well structures

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Abstract

Efficiency droop is generally observed in electroluminescence under high current injection. Optical characterization on efficiency droop in InGaN/GaN multiple-quantum-well structures has been conducted at 12 K. Clear droop behaviors were observed for the sample excited by above-bandgap excitation of GaN with pulse laser. The results show that dislocation is not the crucial factor to droop under high carrier density injection, and Auger recombination just slightly affects the efficiency. The radiative recombination may be mainly affected by a multi-carrier-related process (diffusion and drift with a factor of n 3.5 and n 5.5) at the interface between GaN barrier and InGaN well.

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References

  1. D.G. Morrison, Electron. Des. 50(11), 66 (2002)

    ADS  Google Scholar 

  2. K. Bando, K. Sakano, Y. Noguchi, Y. Shimizu, J. Light Visual Environ. 22(1), 2 (1998)

    Article  ADS  Google Scholar 

  3. T. Mukai, M. Yamada, S. Nakamura, Jpn. J. Appl. Phys. 1(38), 3976 (1999)

    Article  ADS  Google Scholar 

  4. K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, K. Katayama, J. Appl. Phys. 101(3), 033104 (2007)

    Article  ADS  Google Scholar 

  5. A.A. Efremov, N.I. Bochkareva, R.I. Gorbunov, D.A. Lavrinovich, Y.T. Rebane, D.V. Tarkhin, Y.G. Shreter, Semiconductors ±40/5 (2006) 605

  6. B. Monemar, B.E. Sernelius, Appl. Phys. Lett. 91(18), 181103 (2007)

    Article  ADS  Google Scholar 

  7. Y.C. Shen, G.O. Mueller, S. Watanabe, N.F. Gardner, A. Munkholm, M.R. Krames, Appl. Phys. Lett. 91(14), 141101 (2007)

    Article  ADS  Google Scholar 

  8. K.T. Delaney, P. Rinke, C.G. Van de Walle, Appl. Phys. Lett. 94(19), 191109 (2009)

    Article  ADS  Google Scholar 

  9. S.H. Yen, M.C. Tsai, M.L. Tsai, Y.J. Shen, T.C. Hsu, Y.K. Kuo, Appl. Phys. Mater. 97(3), 705 (2009)

    Article  ADS  Google Scholar 

  10. M.F. Schubert, J. Xu, J.K. Kim, E.F. Schubert, M.H. Kim, S. Yoon, S.M. Lee, C. Sone, T. Sakong, Y. Park, Appl. Phys. Lett. 93(4), 041102 (2008)

    Article  ADS  Google Scholar 

  11. M.F. Schubert, Q. Dai, J. Xu, J.K. Kim, E.F. Schubert, Appl. Phys. Lett. 95(19), 191105 (2009)

    Article  ADS  Google Scholar 

  12. M.F. Schubert, J.R. Xu, Q. Dai, F.W. Mont, J.K. Kim, E.F. Schubert, Appl. Phys. Lett. 94(8), 081114 (2009)

    Article  ADS  Google Scholar 

  13. J. Hader, J.V. Moloney, B. Pasenow, S.W. Koch, M. Sabathil, N. Linder, S. Lutgen, Appl. Phys. Lett. 92(26), 261103 (2008)

    Article  ADS  Google Scholar 

  14. N.F. Gardner, G.O. Muller, Y.C. Shen, G. Chen, S. Watanabe, W. Gotz, M.R. Krames, Appl. Phys. Lett. 91(24), 243506 (2007)

    Article  ADS  Google Scholar 

  15. A. David, M.J. Grundmann, J.F. Kaeding, N.F. Gardner, T.G. Mihopoulos, M.R. Krames, Appl. Phys. Lett. 92(5), 053502 (2008)

    Article  ADS  Google Scholar 

  16. U.M.E. Christmas, A.D. Andreev, D.A. Faux, J. Appl. Phys. 98(7), 073522 (2005)

    Article  ADS  Google Scholar 

  17. D.G. Gevaux, A.M. Green, C.C. Phillips, I. Vurgaftman, W.W. Bewley, C.L. Felix, J.R. Meyer, H. Lee, R.U. Martinelli, IEE Proc.: Optoelectron. 150(4), 351 (2003)

    Google Scholar 

  18. M. Brendel, a. Kruse, H. Jönen, L. Hoffmann, H. Bremers, U. Rossow, a. Hangleiter, Appl. Phys. Lett. 99/3 (2011) 031106

  19. P.J. Anthony, N.E. Schumaker, J. Appl. Phys. 51(9), 5038 (1980)

    Article  ADS  Google Scholar 

  20. M. Yano, J. Appl. Phys. 52(5), 3172 (1981)

    Article  ADS  Google Scholar 

  21. R. Olshansky, C. Su, J. Manning, W. Powazinik, IEEE J. Quantum Electron. 20(8), 838 (1984)

    Article  ADS  Google Scholar 

  22. J.S. Jang, T.Y. Seong, J. Appl. Phys. 101/1 (2007)

    Google Scholar 

  23. D. Mistele, F. Fedler, H. Klausing, T. Rotter, J. Stemmer, O.K. Semchinova, J. Aderhold, J. Cryst. Growth 230(3), 564 (2001)

    Article  ADS  Google Scholar 

  24. W. Kim, A. Salvador, A.E. Botchkarev, O. Aktas, S.N. Mohammad, H. Morcoç¸, Appl. Phys. Lett. 69/4 (1996) 559

    Google Scholar 

  25. A.R. Goodwin, J.R. Peters, M. Pion, G.H.B. Thompson, J.E.A. Whiteaway, J. Appl. Phys. 46/7 (1975) 3126

    Google Scholar 

  26. C.B. Su, J. Schlafer, J. Manning, R. Olshansky, Electron. Lett. 18(25), 1108 (1982)

    Article  Google Scholar 

  27. J. Piprek, Physica Status Solidi (a) 207(10), 2217 (2010)

    Article  ADS  Google Scholar 

  28. G.H.B. Thompson, G.D. Henshall, Electron. Lett. 16(1), 42 (1980)

    Article  Google Scholar 

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Acknowledgments

This work is supported by the National Natural Science Foundation of China (Grant number: 11174241), Natural Science Foundation of Shandong Province (No. 2009VRA06063), and the Natural Science Foundation for Distinguished Young Scholars of Shandong province (No. 2008JQB01028). The work at KAIST was supported by the WCU Program (No. R31-2008-000-10071-0) funded by the Ministry of Education, Science and Technology (Korea).

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Authors and Affiliations

  1. Institute of Science and Technology for Opto-Electronic Information, Yantai University, Yantai, 264005, China

    Yuanping Sun & Hongying Guo

  2. Department of Physics and Graduate School of Nanoscience and Technology (WCU), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-701, Republic of Korea

    Lihua Jin & Yong-Hoon Cho

  3. Department of Semiconductor Science and Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju, 561-756, Korea

    E.-K. Suh & H. J. Lee

  4. School of Chemical Engineering, Chonbuk National University, Chonju, 561-756, Korea

    R. J. Choi & Y. B. Hahn

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  1. Yuanping Sun
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  2. Hongying Guo
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Correspondence to Yuanping Sun.

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Sun, Y., Guo, H., Jin, L. et al. Optical excitation study on the efficiency droop behaviors of InGaN/GaN multiple-quantum-well structures. Appl. Phys. B 114, 551–555 (2014). https://doi.org/10.1007/s00340-013-5559-2

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  • DOI: https://doi.org/10.1007/s00340-013-5559-2

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