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Characteristics and growth mechanisms of TixSi(1-x)Oy films by liquid phase deposition

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Abstract.

Using a solution of hexafluorotitanic acid and boric acid, high-refractive-index and high-dielectric-constant films can be deposited on silicon substrates. The constituents of the films were Ti, Si and O analyzed by secondary-ion mass spectroscopy, which indicates that the structure of the films is TixSi(1-x)Oy. The Ti/Si ratio can be modulated by the mole concentration of boric acid. The leakage current density and dielectric constant of the deposited films can be improved by thermal annealing in N2 ambience.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Sun Yat-sen University Kaohsiung, 80424, P.R. China (Fax: 886-7/525-4199, E-mail: mklee@mail.ee.nsysu.edu.tw), , , , , , CN

    M.K. Lee, C.M. Shih & W.H. Shieh

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  1. M.K. Lee
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  2. C.M. Shih
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  3. W.H. Shieh
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Received: 16 November 2000 / Accepted: 2 March 2001 / Published online: 23 May 2001

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Lee, M., Shih, C. & Shieh, W. Characteristics and growth mechanisms of TixSi(1-x)Oy films by liquid phase deposition . Appl Phys A 74, 249–251 (2002). https://doi.org/10.1007/s003390100882

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  • DOI: https://doi.org/10.1007/s003390100882

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